IRG7PH42UD1PBF International Rectifier, IRG7PH42UD1PBF Datasheet - Page 4

• Manufacturer Part Number: IRG7PH42UD1PBF
• Description: IGBT N-CH 1200V 85A TO-247AC
• Manufacturer: International Rectifier

Specifications of IRG7PH42UD1PBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 30A
• Current - Collector (ic) (max): 85A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Type: IGBT
• Dc Collector Current: 85A
• Collector Emitter Voltage Vces: 1.7V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Package: TO-247
• Circuit: Co-Pack
• Switching: Soft
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 85
• Ic @ 100c (a): 45
• Vce(on)@25c Typ (v): 1.70
• Vce(on)@25c Max (v): 2.00
• Ets Typ (mj): 3.29
• Ets Max (mj): 3.8
• Vf Typ: 1.15
• Pd @25c (w): 313
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRG7PH42UD1PbF/IRG7PH42UD1-EP
4
Fig. 7 - Typ. IGBT Output Characteristics
120
100
20
18
16
14
12
10
80
60
40
20
20
18
16
14
12
10
8
6
4
2
0
0
8
6
4
2
0
5
0
Fig. 11 - Typical V
5
Fig. 9 - Typical V
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
T
J
= 150°C; tp = 80μs
2
T
T
J
J
= 150°C
10
= -40°C
10
4
V CE (V)
V GE (V)
V GE (V)
CE
CE
I CE = 15A
I CE = 30A
I CE = 60A
vs. V
vs. V
6
I CE = 15A
I CE = 30A
I CE = 60A
15
15
GE
GE
8
10
20
20
140
120
100
120
100
Fig. 8 - Typ. Diode Forward Voltage Drop
Fig. 12 - Typ. Transfer Characteristics
80
60
40
20
20
18
16
14
12
10
80
60
40
20
0
8
6
4
2
0
0
0.0
2
5
Fig. 10 - Typical V
V
V GE , Gate-to-Emitter Voltage (V)
CE
0.5
4
= 50V; tp = 10μs
Characteristics
T J = 150°C
T
10
T J = 25°C
J
= 25°C
V GE (V)
150°C
V F (V)
25°C
1.0
6
I CE = 15A
I CE = 30A
I CE = 60A
CE
vs. V
15
1.5
8
GE
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2.0
20
10