IRG7PH42UD1PBF International Rectifier, IRG7PH42UD1PBF Datasheet - Page 3

• Manufacturer Part Number: IRG7PH42UD1PBF
• Description: IGBT N-CH 1200V 85A TO-247AC
• Manufacturer: International Rectifier

Specifications of IRG7PH42UD1PBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 30A
• Current - Collector (ic) (max): 85A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Type: IGBT
• Dc Collector Current: 85A
• Collector Emitter Voltage Vces: 1.7V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Package: TO-247
• Circuit: Co-Pack
• Switching: Soft
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 85
• Ic @ 100c (a): 45
• Vce(on)@25c Typ (v): 1.70
• Vce(on)@25c Max (v): 2.00
• Ets Typ (mj): 3.29
• Ets Max (mj): 3.8
• Vf Typ: 1.15
• Pd @25c (w): 313
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig. 1 - Maximum DC Collector Current vs.
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 3 - Typical Gate Threshold Voltage
120
100
(Normalized) vs. Junction Temperature
100
1.0
0.9
0.8
0.7
0.6
0.5
80
60
40
20
80
60
40
20
0
0
25
25
0
T
Case Temperature
J
50
50
2
= -40°C; tp = 80μs
T C , Case Temperature (°C)
T J , Temperature (°C)
LIMITED BY PACKAGE
75
4
75
V CE (V)
100
100
6
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
I C = 1.0mA
125
IRG7PH42UD1PbF/IRG7PH42UD1-EP
125
8
150
10
150
Fig. 6 - Typ. IGBT Output Characteristics
1000
120
100
350
300
250
200
150
100
100
80
60
40
20
50
Fig. 2 - Power Dissipation vs. Case
10
0
0
1
25
0
10
Fig. 4 - Reverse Bias SOA
T
J
T
50
2
= 25°C; tp = 80μs
J
Temperature
= 150°C; V
100
75
4
V CE (V)
V CE (V)
T C (°C)
GE
100
6
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
1000
= 20V
125
8
10000
150
10
3