STGW30NC60WD STMicroelectronics, STGW30NC60WD Datasheet - Page 8

• Manufacturer Part Number: STGW30NC60WD
• Description: MOSFET N-CH 60A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW30NC60WD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5204-5; STGW30NC60WD

Electrical characteristics
8/14
Figure 8.
Figure 10. Normalized breakdown voltage vs
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
Normalized gate threshold voltage
vs temperature
temperature
Figure 9.
Figure 11. Switching losses vs temperature
V
CE(sat)
3.2
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
(V)
3
2
1
0
Collector-emitter on voltage vs
collector current
current
5 10 15 20 25 30 35 40 45 50 55 60
T
J
=-50°C
T
J
=25°C
STGW30NC60WD
T
J
=150°C
HV28950
I
C
(A)