STGW30NC60WD STMicroelectronics, STGW30NC60WD Datasheet - Page 6

• Manufacturer Part Number: STGW30NC60WD
• Description: MOSFET N-CH 60A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW30NC60WD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5204-5; STGW30NC60WD

Electrical characteristics
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Table 8.
Symbol
I
I
Q
Q
V
rrm
rrm
t
t
rr
rr
F
rr
rr
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Collector-emitter diode
Parameter
I
I
I
di/dt = 100 A/µs
(see Figure 20)
I
T
A/µs
(see Figure 20)
F
F
F
F
C
= 20 A, T
= 20 A
= 20 A,V
= 20 A,V
=125 °C, di/dt = 100
Test conditions
R
R
C
= 50 V,
= 50 V,
= 125 °C
Min.
STGW30NC60WD
Typ.
180
2.6
1.6
2.5
4.5
40
50
80
Max.
Unit
nC
nC
ns
ns
V
V
A
A