IXGP20N120B IXYS, IXGP20N120B Datasheet - Page 5

• Manufacturer Part Number: IXGP20N120B
• Description: IGBT 1200V 40A TO-220
• Manufacturer: IXYS

Specifications of IXGP20N120B

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

Fig. 13. Forward current I
Fig. 16. Dynamic parameters Q
Fig. 19. Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
Z
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I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
30
25
20
15
10
10
A
5
0
1
0.0
0
versus T
0.5
40
T
T
T
I
VJ
VJ
VJ
RM
Q
=150°C
=100°C
= 25°C
r
1.0
VJ
0.0001
80
1.5
T
VJ
F
V
120
versus V
F
2.0
°C
r
, I
V
0.001
160
RM
2.5
F
Q
t
rr
r
Fig. 14. Reverse recovery charge Q
Fig. 17. Recovery time t
120
110
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
ns
90
80
70
nC
100
0.01
0
T
V
VJ
R
= 100°C
= 300V
versus -di
200
I
I
I
F
F
F
400
= 20A
= 10A
= 5A
I
I
I
F
F
F
F
0.1
= 20A
= 10A
= 5A
/dt
-di
600
F
-di
DSEP 8-06A/DSEC16-06A
/dt
T
V
rr
t
F
VJ
R
/dt
versus -di
= 100°C
= 300V
A/µs
s
800
A/µs
1000
1000
1
F
/dt
r
I
V
RM
FR
Fig. 15. Peak reverse current I
Constants for Z
Fig. 18 Peak forward voltage V
40
30
20
10
20
15
10
A
V
0
5
0
1
2
3
i
0
0
T
I
T
V
F
t
VJ
VJ
R
fr
= 100°C
= 100°C
= 300V
= 10A
200
200
versus -di
t
f
versus di
I
I
I
F
F
F
R
1.449
0.5578
0.4931
= 20A
= 10A
= 5A
thi
IXGP 20N120BD1
400
400
thJC
(K/W)
IXGP 20N120B
calculation:
F
F
600
/dt
600
/dt
di
-di
V
F
FR
/dt
F
/dt
A/µs
A/µs
800
800
t
0.0052
0.0003
0.0169
i
(s)
RM
1000
1000
FR
1.2
0.9
0.6
0.3
0.0
µs
and
t
fr