IXGP20N120B IXYS, IXGP20N120B Datasheet
Home Discrete Semiconductor Products IGBTs - Single IXGP20N120B
Manufacturer Part Number
IXGP20N120B
Description
IGBT 1200V 40A TO-220
Specifications of IXGP20N120B
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.4V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
190W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
40A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-220
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
High Voltage IGBT with Diode
Symbol
V
I
I
V
© 2003 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature
soldering SMD devices for 10s
Weight
Preliminary Data Sheet
GES
CM
CES
C25
C110
JM
GE(th)
CE(sat)
GEM
J
stg
CES
CGR
GES
C
d
Test Conditions
I
V
V
V
I
Note 2
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque
C
C
GE
C
C
C
C
CE
CE
J
J
GE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 µA, V
= V
= 0 V
= 0 V, V
= 20A
CES
,
V
GE
J
GE
= 125°C, R
= ±20 V
= 15 V
CE
= V
(M3.5 screw)
GE
GE
G
= 1 MΩ
= 10 Ω
20N120B
20N120BD1
T
(T
J
=125°C
J
= 25°C, unless otherwise specified)
IXGP 20N120B
IXGP 20N120BD1
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@0.8 V
Maximum Ratings
typ.
I
2.9
2.8
CM
0.55/5 Nm/lb.in.
1200
1200
= 40
±20
±30
100
190
150
300
260
40
20
CES
max.
4
±100
150
5.0
3.4
50
D1
µA
µA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
A
A
A
A
g
V
I
V
t
G = Gate
E = Emitter
Features
Advantages
TO-220 (IXGP)
C25
fi(typ)
International standard package
IGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
MOS Gate turn-on
- drive simplicity
Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
Saves space (two devices in one
package)
Easy to mount with 1 screw
Reduces assembly time and cost
CES
CE(sat)
G
C E
= 1200 V
=
= 160 ns
= 3.4 V
C = Collector
TAB = Collector
40 A
DS99138(12/03)
RM
C (TAB)
Related parts for IXGP20N120B
IXGP20N120B Summary of contents
... GE(th CES CE CES ±20 V GES 20A CE(sat Note 2 © 2003 IXYS All rights reserved IXGP 20N120B IXGP 20N120BD1 Maximum Ratings 1200 = 1 MΩ 1200 GE ±20 ± 100 = 10 Ω @0.8 V CES 190 -55 ... +150 150 -55 ... +150 0.55/5 Nm/lb.in. 300 260 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... T or increased R J Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... Fig. 5. Colle ctor-to-Em itter Voltage vs. Gate-to-Em iite r voltage 6 40A C 20A 4.5 10A 4 3.5 3 2 Volts G E © 2003 IXYS All rights reserved Fig. 2. Extended Output Characte ris tics 160 140 120 100 3.5 4 4.5 0 1.5 1.4 1.3 1.2 1.1 7V 1.0 0.9 0.8 5V ...
... T = 125º 15V GE 1000 V = 960V CE 800 I = 10A C 600 400 I = 20A C 200 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 25º 550 500 450 400 350 I = 40A ...
... T VJ Fig. 16. Dynamic parameters versus K thJC 0.1 0.01 0.001 0.00001 0.0001 0.001 Fig. 19. Transient thermal resistance junction to case NOTE: Fig Fig. 6 shows typical values © 2003 IXYS All rights reserved 1 100° 300V R 1.2 1 20A 10A 0 0.6 0.4 ...
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