IRGB4064DPBF International Rectifier, IRGB4064DPBF Datasheet - Page 6

• Manufacturer Part Number: IRGB4064DPBF
• Description: IGBT ULT FAST DIO 600V TO-220AB
• Manufacturer: International Rectifier

Specifications of IRGB4064DPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.91V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 101W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 101W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +175°C
• No. Of Pins: 3
• Rise Time: 15ns
• Rohs Compliant: Yes
• Transistor Type: IGBT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRGB4064DPbF
6
1000
300
250
200
150
100
100
20
15
10
50
10
Fig. 19- Typical Diode I
5
0
1
Fig. 21 - Typical Diode E
0
0
0
Fig. 23- Typ. Capacitance vs. V
V
2
I
CC
CE
200
4
= 400V; V
= 10A; T
20
V
6
GE
T
400
J
= 0V; f = 1MHz
8 10 12 14 16 18 20 22
= 175°C
di F /dt (A/µs)
R G = 47Ω
R G = 100Ω
R G = 22Ω
R G = 10Ω
40
J
I F (A)
V CE (V)
600
GE
= 175°C
= 15V;
RR
60
800
vs. di
RR
Coes
Cres
Cies
vs. I
1000
F
/dt
80
F
CE
1200
100
900
800
700
600
500
400
300
V
16
14
12
10
16
14
12
10
CC
8
6
4
2
0
8
6
4
2
0
Fig. 22- Typ. V
Fig. 20 - Typical Diode Q
0
= 400V; V
8
0
Fig. 24 - Typical Gate Charge vs. V
100Ω
4
Q G , Total Gate Charge (nC)
V
10
47 Ω
CC
GE
500
I
=400V, T
CE
8
= 15V; T
T sc
di F /dt (A/µs)
GE
= 10A, L=600µH
V GE (V)
22Ω
vs Short Circuit Time
12
12
C
J
10Ω
= 175°C
300V
=25°C
1000
16
RR
5.0A
I sc
14
10A
20A
20
400V
www.irf.com
1500
16
24
GE
80
70
60
50
40
30
20
10
0