IRGB4064DPBF International Rectifier, IRGB4064DPBF Datasheet - Page 3

• Manufacturer Part Number: IRGB4064DPBF
• Description: IGBT ULT FAST DIO 600V TO-220AB
• Manufacturer: International Rectifier

Specifications of IRGB4064DPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.91V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 101W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 101W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +175°C
• No. Of Pins: 3
• Rise Time: 15ns
• Rohs Compliant: Yes
• Transistor Type: IGBT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig. 1 - Maximum DC Collector Current vs.
100
0.1
24
20
16
12
40
30
20
10
10
8
4
0
0
Fig. 5 - Typ. IGBT Output Characteristics
1
0
0
1
Tc = 25°C
Tj = 175°C
Single Pulse
20
Fig. 3 - Forward SOA,
T
Case Temperature
2
40
T
C
J
= 25°C; T
= -40°C; tp = 80µs
60
10
4
V CE (V)
V CE (V)
80 100 120 140 160 180
T C (°C)
100µsec
DC
1msec
J
≤
6
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
175°C
10µsec
100
8
1000
10
120
100
100
40
30
20
10
80
60
40
20
10
0
1
0
Fig. 6 - Typ. IGBT Output Characteristics
10
0
0
Fig. 2 - Power Dissipation vs. Case
Fig. 4 - Reverse Bias SOA
20
T
J
2
40
= 175°C; V
T
J
= 25°C; tp = 80µs
60
Temperature
4
IRGB4064DPbF
V CE (V)
V CE (V)
80 100 120 140 160 180
T C (°C)
100
CE
6
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
= 15V
8
1000
10
3