IRGB4064DPBF International Rectifier, IRGB4064DPBF Datasheet - Page 4

• Manufacturer Part Number: IRGB4064DPBF
• Description: IGBT ULT FAST DIO 600V TO-220AB
• Manufacturer: International Rectifier

Specifications of IRGB4064DPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.91V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 101W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 101W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +175°C
• No. Of Pins: 3
• Rise Time: 15ns
• Rohs Compliant: Yes
• Transistor Type: IGBT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRGB4064DPbF
4
20
18
16
14
12
10
40
30
20
10
20
18
16
14
12
10
8
6
4
2
0
0
8
6
4
2
0
Fig. 7 - Typ. IGBT Output Characteristics
5
0
5
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
Fig. 9 - Typical V
Fig. 11 - Typical V
2
T
J
= 175°C; tp = 80µs
10
10
T
T
J
J
4
= -40°C
V GE (V)
V CE (V)
V GE (V)
= 175°C
I CE = 5.0A
I CE = 10A
I CE = 20A
I CE = 5.0A
I CE = 10A
I CE = 20A
CE
6
CE
15
vs. V
15
vs. V
GE
8
GE
20
10
20
40
30
20
10
80
70
60
50
40
30
20
10
20
18
16
14
12
10
0
8
6
4
2
0
0
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 12 - Typ. Transfer Characteristics
0.0
5
0
1.0
Fig. 10 - Typical V
V
-40°C
25°C
175°C
5
CE
2.0
10
= 50V; tp = 10µs
T J = 25°C
T J = 175°C
T
3.0
J
V GE (V)
tp = 80µs
V GE (V)
V F (V)
= 25°C
10
4.0
I CE = 5.0A
I CE = 10A
I CE = 20A
CE
15
5.0
vs. V
15
6.0
GE
www.irf.com
7.0
20
20