IRG4PC40KDPBF International Rectifier, IRG4PC40KDPBF Datasheet - Page 3

IGBT W/DIODE 600V 42A TO247AC

IRG4PC40KDPBF

Manufacturer Part Number
IRG4PC40KDPBF
Description
IGBT W/DIODE 600V 42A TO247AC
Manufacturer
International Rectifier
Datasheets

Specifications of IRG4PC40KDPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 25A
Current - Collector (ic) (max)
42A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
42A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
42A
Collector Emitter Voltage Vces
2.1V
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Rohs Compliant
Yes
Operating Temperature (min)
-55C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4PC40KDPBF

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100
10
30
25
20
15
10
1
5
0
0.1
0.1
Square wave:
V
CE
, Collector-to-Emitter Voltage (V)
60% of rated
Ideal diodes
I
T = 150 C
voltage
J
1
o
V
20µs PULSE WIDTH
GE
T = 25 C
J
= 15V
1
o
10
f, Frequency (KHz)
RMS
100
10
1
5
T = 150°C
J
V
GE
10
, Gate-to-Emitter Voltage (V)
7
T = 25°C
J
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation =
J
sink
= 90°C
9
V
5µs PULSE WIDTH
CC
= 50V
W
11
3
100
A

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