IRG4PC40KDPBF International Rectifier, IRG4PC40KDPBF Datasheet
Home Discrete Semiconductor Products IGBTs - Single IRG4PC40KDPBF
Manufacturer Part Number
IRG4PC40KDPBF
Description
IGBT W/DIODE 600V 42A TO247AC
Manufacturer
International Rectifier
Specifications of IRG4PC40KDPBF
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 25A
Current - Collector (ic) (max)
42A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
42A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
42A
Collector Emitter Voltage Vces
2.1V
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Rohs Compliant
Yes
Operating Temperature (min)
-55C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4PC40KDPBF
Available stocks
Part Number:
IRG4PC40KDPBF
Part Number:
IRG4PC40KDPBF
Part Number:
IRG4PC40KDPBF
Part Number:
IRG4PC40KDPBF
Features
www.irf.com
θ
θ
θ
θ
GE
TM
G
n-channel
C
E
TO-247AC
CE(on) typ.
GE
CES
=
C
1
Related parts for IRG4PC40KDPBF
IRG4PC40KDPBF Summary of contents
Features θ θ θ θ www.irf.com n-channel C CES = CE(on) typ TO-247AC 1 ...
J ∆ ∆ J Ω Ω Ω www.irf.com ...
Square wave: 60% of rated 15 voltage I 10 Ideal diodes 5 0 0.1 100 T = 150 20µs PULSE WIDTH 1 0 Collector-to-Emitter Voltage (V) CE www.irf.com ...
T , Case Temperature ( 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 5 15V GE 80 ...
1MHz ies res gc 2500 oes ce gc 2000 C ies 1500 1000 500 C oes C ...
R = Ohm 150 C ° 480V 15V GE 6.0 4.0 2.0 0 Collector-to-emitter Current (A) C 100 10 1 0.8 6 1000 ...
V = 200V 125° 25° 30A 15A 5. 100 di /dt - (A/µs) f 800 V = 200V R ...
Same type device as D.U.T. 430µF 80% of Vce D.U. off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on d(on) 8 +Vge 10% Vce ...
L 1000V 50V 6000µF 100V www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT D.U. ...
Notes: Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20) V =80%( =20V, L=10µ CES GE Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. 15.90 (.626) ...
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...
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