IRG4PC40KDPBF International Rectifier, IRG4PC40KDPBF Datasheet
IRG4PC40KDPBF
Specifications of IRG4PC40KDPBF
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IRG4PC40KDPBF Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, V • Generation 4 IGBT ...
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IRG4PC40KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) ...
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rate d 15 volta 0.1 Fig Typical Load ...
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IRG4PC40KD 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) ...
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1MHz ies res gc 2500 oes ce gc 2000 C ies 1500 1000 500 C oes C ...
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IRG4PC40KD 8 Ohm 150 C ° 480V 15V GE 6.0 4.0 2.0 0 Collector-to-emitter Current (A) C Fig Typical Switching ...
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° ° ...
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IRG4PC40KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...
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Figure 18e µ Figure 19. www.irf.com ...
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IRG4PC40KD Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor 0.1%. T Pulse width 5.0µs, single ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...