IRG4PC40KDPBF International Rectifier, IRG4PC40KDPBF Datasheet

IGBT W/DIODE 600V 42A TO247AC

IRG4PC40KDPBF

Manufacturer Part Number
IRG4PC40KDPBF
Description
IGBT W/DIODE 600V 42A TO247AC
Manufacturer
International Rectifier
Datasheets
1.IRG4PC40KDPBF.pdf (11 pages)
2.IRG4PC40KDPBF.pdf (11 pages)

Specifications of IRG4PC40KDPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 25A
Current - Collector (ic) (max)
42A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
42A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
42A
Collector Emitter Voltage Vces
2.1V
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Rohs Compliant
Yes
Operating Temperature (min)
-55C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4PC40KDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRG4PC40KDPBF
Manufacturer:
FUJIKRUA
Quantity:
1 200
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
IRG4PC40KDPBF
Manufacturer:
IR
Quantity:
8 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRG4PC40KDPBF
Manufacturer:
IR
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRG4PC40KDPBF
Quantity:
5 000
Features
Features
Features
Features
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Absolute Maximum Ratings
Thermal Resistance
• Short Circuit Rated UltraFast: Optimized for
• Generation 4 IGBT design provides tighter
• IGBT co-packaged with HEXFRED
• Industry standard TO-247AC package
Benefits
• Generation 4 IGBTs offer highest efficiencies
• HEXFRED diodes optimized for performance with
• Designed to be a "drop-in" replacement for
R
R
R
R
Wt
V
I
I
I
I
I
I
t
V
P
P
T
T
Circuit Rated to 10µs @ 125°C, V
Generation 3
C
C
CM
LM
F
FM
sc
www.irf.com
high operating frequencies >5.0 kHz , and Short
available
IGBTs. Minimized recovery characteristics require
parameter distribution and higher efficiency than
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
STG
CES
GE
D
D
J
equivalent industry-standard Generation 3 IR IGBTs
@ T
@ T
@ T
JC
JC
CS
JA
less/no snubbing
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Parameter
Parameter
GE
TM
= 15V
ultrafast,
G
n-ch an nel
Min.
–––
–––
–––
–––
–––
300 (0.063 in. (1.6mm) from case)
IRG4PC40KD
C
E
10 lbf•in (1.1 N•m)
-55 to +150
TO-247AC
Max.
6 (0.21)
± 20
600
160
Typ.
42
25
84
84
15
84
10
65
0.24
–––
–––
–––
Short Circuit Rated
@V
V
CE(on) typ.
UltraFast IGBT
V
GE
CES
= 15V, I
Max.
0.77
–––
–––
1.7
40
= 600V
PD -91584A
C
4/15/2000
2.1V
= 25A
Units
Units
g (oz)
°C/W
µs
°C
V
A
V
W
1

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IRG4PC40KDPBF Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, V • Generation 4 IGBT ...

Page 2

IRG4PC40KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) ...

Page 3

rate d 15 volta 0.1 Fig Typical Load ...

Page 4

IRG4PC40KD 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) ...

Page 5

1MHz ies res gc 2500 oes ce gc 2000 C ies 1500 1000 500 C oes C ...

Page 6

IRG4PC40KD 8 Ohm 150 C ° 480V 15V GE 6.0 4.0 2.0 0 Collector-to-emitter Current (A) C Fig Typical Switching ...

Page 7

° ° ...

Page 8

IRG4PC40KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...

Page 9

Figure 18e µ Figure 19. www.irf.com ...

Page 10

IRG4PC40KD Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor 0.1%. T Pulse width 5.0µs, single ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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