IRG4BC30U-SPBF International Rectifier, IRG4BC30U-SPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4BC30U-SPBF
• Description: IGBT UFAST 600V 23A D2PAK
• Manufacturer: International Rectifier

Specifications of IRG4BC30U-SPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 12A
• Current - Collector (ic) (max): 23A
• Power - Max: 100W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Type: IGBT
• Dc Collector Current: 23A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 100W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part
• Other names: *IRG4BC30U-SPBF

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Fig. 9 - Typical Switching Losses vs. Gate
2 0 0 0
1 6 0 0
1 2 0 0
0.5
0.4
0.3
0.2
8 0 0
4 0 0
0
0
V
V
T
1
I
Fig. 7 - Typical Capacitance vs.
C C
G E
J
C
Collector-to-Emitter Voltage
V
= 1 2 A
= 2 5 °C
C E
= 4 8 0 V
= 1 5 V
C
C
C
1 0
ie s
o e s
re s
, C o lle cto r-to -E m itte r V o lta g e (V )
R , G a te R e sista n ce ( )
G
V
C
C
C
G E
ies
res
oes
Resistance
2 0
= 0V ,
= C
= C
= C
ge
gc
ce
3 0
+ C
+ C
1 0
gc
gc
f = 1M H z
, C
4 0
ce
S H O R TE D
5 0
6 0
1 0 0
A
A
Fig. 10 - Typical Switching Losses vs.
0.1
1 0
1
2 0
1 6
1 2
-60
8
4
0
Fig. 8 - Typical Gate Charge vs.
0
R
V
V
V
G
G E
C C
I
-40
C E
C
Gate-to-Emitter Voltage
= 1 5 V
= 4 8 0 V
= 2 3
= 1 2 A
= 4 0 0 V
Junction Temperature
-20
T , Ju n ctio n Te m pe ra tu re (°C )
Q , To ta l G a te C h a rg e (n C )
J
1 0
g
0
2 0
2 0
4 0
IRG4BC30U-S
6 0
3 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
I
I
I
C
C
C
= 2 4 A
4 0
= 1 2A
= 6 .0 A
5
5 0
A
A