IRG4BC30U-STRR International Rectifier, IRG4BC30U-STRR Datasheet

IRG4BC30U-STRR

Manufacturer Part Number
IRG4BC30U-STRR
Description
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4BC30U-STRR

Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / Rohs Status
Not Compliant
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
*
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
www.irf.com
Features
• UltraFast: Optimized for high operating
• Generation 4 IGBT design provides tighter
• Industry standard D
R
R
V
I
I
I
I
V
E
P
P
T
T
Generation 3
C
C
CM
LM
When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering
kHz in resonant mode
parameter distribution and higher efficiency than
industry-standard Generation 3 IR IGBT's
J
STG
CES
GE
ARV
D
D
qJC
qJA
frequencies 8-40 kHz in hard switching, >200
techniques refer to application note #AN-994.
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Junction-to-Ambient, ( PCB Mounted,steady-state)*
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
2
Pak package
Parameter
Parameter
G
n-channel
IRG4BC30U-S
Typ.
–––
–––
C
E
-55 to + 150
D P a k
Max.
± 20
600
100
UltraFast Speed IGBT
23
12
92
10
42
2
92
V
@V
CE(on) typ.
Max.
V
GE
1.2
40
CES
= 15V, I
PD - 91803
= 600V
= 1.95V
C
Units
= 12A
Units
°C/W
mJ
W
V
A
V
1

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IRG4BC30U-STRR Summary of contents

Page 1

... STG Thermal Resistance R Junction-to-Case qJC R Junction-to-Ambient, ( PCB Mounted,steady-state)* qJA * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com G Parameter Parameter IRG4BC30U-S UltraFast Speed IGBT C V CES V CE(on) typ n-channel Max. 600 ...

Page 2

... IRG4BC30U-S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) /DT Temperature Coeff. of Threshold Voltage DV GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES I Gate-to-Emitter Leakage Current ...

Page 3

... C o lle cto r- itte ltag Fig Typical Output Characteristics www.irf.com req (kH z) Fig Typical Load Current vs. Frequency of fundamental; for triangular wave, I=I RMS ° µ IRG4BC30U-S For both: Triangular wave: Duty cycle: 50 125° 55°C sink Gate drive as specified Power Dissipation = 1.75W ° ° ...

Page 4

... IRG4BC30U (° Fig Maximum Collector Current vs.Case Temperature 0.2 0 0 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 125 150 Fig Collector-to-Emitter Voltage vs. 0. cta lse D ura tio µ 2.5 2.0 1.5 -60 -40 - tio (°C ) ...

Page 5

... C ies res oes lle cto r- itte lta Fig Typical Capacitance vs. Collector-to-Emitter Voltage 0 ° 0.4 0.3 0 sista Fig Typical Switching Losses vs. Gate Resistance www.irf.com IRG4BC30U Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 0.1 -60 -40 - ctio (° Fig Typical Switching Losses vs. Junction Temperature ...

Page 6

... IRG4BC30U-S 1 ° 1.2 0.8 0.4 0 lle cto r-to-E m itte rre Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 1000 100 0 20V 125 ° TIN 100 lle cto r-to-E m itte r V olta Fig Turn-Off SOA 1000 www.irf.com ...

Page 7

... Load Test Circuit 50V 1000V 10 www.irf.com . 480V river 90 ff off IRG4BC30U-S 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss D .U .T. Test Circuit * Driver same type as D.U.T 480V Fig. 14b - Switching Loss Waveforms t=5µs 480V 25° ...

Page 8

... IRG4BC30U Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055 1.78 (.070) 1.27 (.050 1.40 (.055) 3X 1.14 (.045) 3X 5.08 (.200 & 14.5M , 1982 LLIN & WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR FAR EAST: K& ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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