IRG4BC30U International Rectifier, IRG4BC30U Datasheet
IRG4BC30U
Manufacturer Part Number
IRG4BC30U
Description
IGBT UFAST 600V 23A TO-220AB
Manufacturer
International Rectifier
Datasheet
1.IRG4BC30U.pdf
(9 pages)
Specifications of IRG4BC30U
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 12A
Current - Collector (ic) (max)
23A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*IRG4BC30U
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4BC30U
Manufacturer:
IR
Quantity:
30 540
Company:
Part Number:
IRG4BC30U
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRG4BC30U-S
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRG4BC30UD
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRG4BC30UDPBF
Manufacturer:
FSC
Quantity:
3 400
Benefits
Absolute Maximum Ratings
Thermal Resistance
Features
Features
Features
Features
Features
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
• UltraFast: optimized for high operating
• Generation 4 IGBT design provides tighter
• Industry standard TO-220AB package
www.irf.com
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
CM
LM
Generation 3
kHz in resonant mode
parameter distribution and higher efficiency than
ARV
J
STG
θJC
θCS
θJA
CES
GE
D
D
industry-standard Generation 3 IR IGBTs
frequencies 8-40 kHz in hard switching, >200
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
G
n-channel
300 (0.063 in. (1.6mm from case )
2 (0.07)
Typ.
0.50
–––
–––
E
C
10 lbf•in (1.1N•m)
-55 to + 150
TO-220AB
Max.
± 20
600
100
23
12
92
10
42
92
V
@V
CE(on) typ.
Max.
V
–––
–––
GE
1.2
80
CES
= 15V, I
= 600V
= 1.95V
C
= 12A
Units
g (oz)
4/17/2000
Units
°C/W
W
mJ
°C
V
A
V
1
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IRG4BC30U Summary of contents
Page 1
Features Features Features Features Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard ...
Page 2
Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage — /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. ...
Page 3
wave : lta ...
Page 4
(° Fig Maximum Collector ...
Page 5
...
Page 6
° 1.2 0.8 0.4 0 ...
Page 7
L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth ...
Page 8
(. (. (. (. 6.47 (.255 ) 6.10 (.240 ) (.6 ...
Page 9
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...