STGD5NB120SZT4 STMicroelectronics, STGD5NB120SZT4 Datasheet - Page 7

• Manufacturer Part Number: STGD5NB120SZT4
• Description: IGBT N-CHAN 10A 1200V DPAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGD5NB120SZT4

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 5A
• Current - Collector (ic) (max): 10A
• Power - Max: 75W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 75W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 10A
• Gate To Emitter Voltage (max): ±20V
• Package Type: DPAK
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 10 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 10 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-4352-2

STGD5NB120SZ
Figure 8.
Figure 10. Breakdown voltage vs temperature Figure 11. Normalized collector-emitter on
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
Normalized gate threshold voltage
vs temperature
Figure 9.
Collector-emitter on voltage vs
collector current
voltage vs temperature
current
Electrical characteristics
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