STGD5NB120SZT4 STMicroelectronics, STGD5NB120SZT4 Datasheet - Page 5

• Manufacturer Part Number: STGD5NB120SZT4
• Description: IGBT N-CHAN 10A 1200V DPAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGD5NB120SZT4

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 5A
• Current - Collector (ic) (max): 10A
• Power - Max: 75W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 75W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 10A
• Gate To Emitter Voltage (max): ±20V
• Package Type: DPAK
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 10 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 10 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-4352-2

STGD5NB120SZ
Table 6.
Table 7.
1.
2. Turn-off losses include also the tail of the collector current
Table 8.
Symbol
(di/dt)
(di/dt)
Symbol
Symbol
t
t
E
E
E
E
t
t
t
t
r
r
offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are
at the same temperature (25°C and 125°C)
d
d
d(on)
d(on)
(V
(V
Eon is the turn-on losses when a typical diode is used in the test circuit in
on
on
E
E
I
off
off
(
(
t
t
AS
t
t
t
t
off
off
c
c
r
r
f
f
ts
ts
off
off
(2)
(2)
(1)
(1)
on
on
)
)
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Cross-over time
Off voltage rise time
Turn-off delay time
Current fall time
Cross-over time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Unclamped inductive
switching current
Switching on/off (inductive load)
Switching energy (inductive load)
Functional test
Parameter
Parameter
Parameter
V
R
(see Figure 18)
V
R
T
V
T
V
R
(see Figure 18)
V
R
T
V
R
(see Figure 18)
V
R
T
C
start
CC
CC
CC
C
C
drive
drive
CC
CC
CC
CC
drive
drive
drive
drive
= 125 °C
= 125 °C
= 125 °C
= 960 V, I
= 960 V, I
= 50 V, L = 1.8 mH
= 960 V, I
= 960 V, I
= 960 V, I
= 960 V, I
= 1 kΩ, V
= 1 kΩ, V
= 25 °C, R
= 1 kΩ, V
= 1 kΩ, V
= 1 kΩ, V
= 1 kΩ, V
Test conditions
Test conditions
Test conditions
(see Figure 18)
(see Figure 18)
(see Figure 18)
C
C
C
C
C
C
GE
GE
GE
GE
GE
GE
drive
= 5A
= 5A
= 5A
= 5A
= 5A
= 5A
= 15 V
= 15 V,
= 15 V,
= 15 V
= 15 V
= 15 V,
= 1 kΩ
(see Figure
Electrical characteristics
Min.
Min.
Min.
3.3
11.59
12.68
18). If the IGBT is
Typ.
39.6
12.1
1.13
12.1
Typ.
Typ.
690
170
600
185
2.59
2.64
10.2
2.2
2.2
39
4
5
2
9
Max.
Max.
Max.
A/µs
A/µs
Unit
Unit
Unit
ns
ns
ns
ns
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
A
5/15