APT50GN120L2DQ2G Microsemi Power Products Group, APT50GN120L2DQ2G Datasheet

IGBT 1200V 134A 543W TO264

APT50GN120L2DQ2G

Manufacturer Part Number
APT50GN120L2DQ2G
Description
IGBT 1200V 134A 543W TO264
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT50GN120L2DQ2G.pdf (9 pages)

Specifications of APT50GN120L2DQ2G

Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 50A
Current - Collector (ic) (max)
134A
Power - Max
543W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT50GN120L2DQ2GMI
APT50GN120L2DQ2GMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT50GN120L2DQ2G
Manufacturer:
Microsemi Power Products Group
Quantity:
135
TYPICAL PERFORMANCE CURVES
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s
have a very short, low amplitude tail current and low Eoff. The Trench Gate design
results in superior V
parameter distribution and slightly positive V
gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive
design and minimizes losses.
•
• Trench Gate: Low V
• Easy Paralleling
• 10µs Short Circuit Capability
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
1200V NPT Field Stop
SSOA
(BR)CES
R
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
GINT
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
CE(on)
CE(on)
performance. Easy paralleling results from very tight
1
(V
CE
CE
CE
@ T
8
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
@ T
CE(on)
®
GE
GE
C
C
GE
GE
= 150°C
J
= 110°C
= 15V, I
= 15V, I
C
= 150°C
= ±20V)
, I
= 25°C
temperature coefficient. Built-in
C
GE
= 2mA, T
GE
GE
C
C
= 0V, I
= 50A, T
= 50A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 400µA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
APT50GN120L2DQ2(G)
1200
MIN
1.4
APT50GN120L2DQ2
APT50GN120L2DQ2G*
5
150A @ 1200V
-55 to 150
APT50GN120L2DQ2(G)
1200
TYP
±30
134
150
543
300
5.8
1.7
1.9
66
4
1200V
G
G
C
E
MAX
TBD
200
600
6.5
2.1
TO-264
Max
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA
Ω

Related parts for APT50GN120L2DQ2G

Image
Part Number
Description
Manufacturer
Datasheet
Request R
APT30GP60BDQ1G
Part Number:
APT30GP60BDQ1G
Description:
IGBT 600V 100A 463W TO247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT30GP60BDQ1G.pdf (9 pages)
APT65GP60L2DQ2G
Part Number:
APT65GP60L2DQ2G
Description:
IGBT 600V 198A 833W TO264
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT65GP60L2DQ2G.pdf (9 pages)
APT11GP60BDQBG
Part Number:
APT11GP60BDQBG
Description:
IGBT 600V 41A 187W TO247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT11GP60BDQBG.pdf (7 pages)
APT23F60B
Part Number:
APT23F60B
Description:
MOSFET N-CH 600V 23A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT23F60B.pdf (4 pages)
APT5040KFLLG
Part Number:
APT5040KFLLG
Description:
MOSFET N-CH 500V 17A TO-220
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT5040KFLLG.pdf (5 pages)
APT1204R7KFLLG
Part Number:
APT1204R7KFLLG
Description:
MOSFET N-CH 1200V 3.5A TO-220
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT1204R7KFLLG.pdf (5 pages)
APT5024BVRG
Part Number:
APT5024BVRG
Description:
MOSFET N-CH 500V 22A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT5024BVRG.pdf (4 pages)
APT10M25BVRG
Part Number:
APT10M25BVRG
Description:
MOSFET N-CH 100V 75A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT10M25BVRG.pdf (4 pages)
APT20M45BVRG
Part Number:
APT20M45BVRG
Description:
MOSFET N-CH 200V 56A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT20M45BVRG.pdf (4 pages)
APT5018BLLG
Part Number:
APT5018BLLG
Description:
MOSFET N-CH 500V 27A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT5018BLLG.pdf (5 pages)
APT30M85BVRG
Part Number:
APT30M85BVRG
Description:
MOSFET N-CH 300V 40A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT30M85BVRG.pdf (4 pages)
APT20M40BVRG
Part Number:
APT20M40BVRG
Description:
MOSFET N-CH 200V 59A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT20M40BVRG.pdf (4 pages)
APT5020BVFRG
Part Number:
APT5020BVFRG
Description:
MOSFET N-CH 500V 26A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT5020BVFRG.pdf (4 pages)
APT30M85BVFRG
Part Number:
APT30M85BVFRG
Description:
MOSFET N-CH 300V 40A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT30M85BVFRG.pdf (4 pages)
APT20M36BFLLG
Part Number:
APT20M36BFLLG
Description:
MOSFET N-CH 200V 65A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT20M36BFLLG.pdf (5 pages)

APT50GN120L2DQ2G Summary of contents

Page 1

... 1200V 0V 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT50GN120L2DQ2(G) APT50GN120L2DQ2 APT50GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. TO-264 Max 25°C unless otherwise specified. C APT50GN120L2DQ2(G) 1200 ±30 134 66 150 150A @ 1200V 543 -55 to 150 300 MIN TYP ...

Page 2

Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc SSOA Switching Safe Operating ...

Page 3

V , COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T J 160 250µs PULSE TEST<0.5 % DUTY CYCLE 140 ...

Page 4

V = 15V 800V 25°C T =125° 2.2Ω 100 µ COLLECTOR TO EMITTER CURRENT (A) CE ...

Page 5

TYPICAL PERFORMANCE CURVES 6,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.25 0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0. Figure ...

Page 6

Gate Voltage t d(off) 90 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions T = 125° Gate Voltage 10% t d(on) Collector ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current (Square wave, 50% duty) F Non-Repetitive Forward Surge Current (T I FSM ...

Page 8

T = 175° 125° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 26. Forward Current vs. Forward Voltage 5000 T = ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

Related keywords