APT50GT120LRDQ2G Microsemi Power Products Group, APT50GT120LRDQ2G Datasheet - Page 3

• Manufacturer Part Number: APT50GT120LRDQ2G
• Description: IGBT 1200V 106A 694W TO264
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT50GT120LRDQ2G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 50A
• Current - Collector (ic) (max): 106A
• Power - Max: 694W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT50GT120LRDQ2GMI; APT50GT120LRDQ2GMI

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
120
100
140
120
100
80
60
40
20
80
60
40
20
0
0
6
5
4
3
2
1
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
GE
V
<0.5 % DUTY CYCLE
TEST<0.5 % DUTY
250µs PULSE TEST
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
T
= 15V
J
1
2
, GATE-TO-EMITTER VOLTAGE (V)
T
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
J
T
T
= 25°C.
J
J
= 125°C
= 25°C
T
10
0
J
2
4
= 125°C
T
25
J
T
= 25°C
J
3
6
= -55°C
12
50
I
I
C
I
C
4
8
C
= 50A
= 25A
75
= 100A
10
5
100 125 150
14
J
12
6
= 25°C)
16
14
7
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
150
125
100
160
140
120
100
75
50
25
16
14
12
10
80
60
40
20
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
7
6
5
4
3
2
1
0
0
-50
V
25
0
0
CE
T
I
<0.5 % DUTY CYCLE
C
250µs PULSE TEST
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 50A
-25
50
I
V
C
T
GE
T
= 100A
50
C
J
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
5
0
100
GATE CHARGE (nC)
I
C
25
15V
= 50A
75
150
V
V
13V
CE
CE
10
50
= 240V
= 600V
200
I
12V
C
100
= 25A
75 100 125 150
11V
250
15
10V
V
125
CE
300
J
9V
= 960V
= 125°C)
8V
7V
350
150
20