APT25GP120BDQ1G Microsemi Power Products Group, APT25GP120BDQ1G Datasheet - Page 4

IGBT 1200V 69A 417W TO247

APT25GP120BDQ1G

Manufacturer Part Number
APT25GP120BDQ1G
Description
IGBT 1200V 69A 417W TO247
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT25GP120BDQ1G

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 25A
Current - Collector (ic) (max)
69A
Power - Max
417W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT25GP120BDQ1GMI
APT25GP120BDQ1GMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT25GP120BDQ1G
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT25GP120BDQ1G
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Company:
Part Number:
APT25GP120BDQ1G
Quantity:
3 500
FIGURE 15, Switching Energy Losses vs. Gate Resistance
3500
3000
2500
2000
1500
1000
4500
4000
3500
3000
2500
2000
1500
1000
FIGURE 13, Turn-On Energy Loss vs Collector Current
500
500
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
16
14
12
10
35
30
25
20
15
10
8
6
4
2
0
5
0
0
0
I
I
CE
CE
10 15
10 15
10 15
I
0
CE
V
V
T
V
V
R
V
T
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
R
J
CE
GE
CE
GE
G
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
G
= 125°C
= 25°C
= 5Ω
= 5Ω
= 600V
= 600V
= +15V
= +15V
= 600V
=
R
V
5Ω, L
G
GE
10
, GATE RESISTANCE (OHMS)
20
20
20
,
T
T
= 15V
J
J
=
=
=125°C
100
25
25
25
25 or 125°C,V
µ
20
H, V
30
30
30
CE
35
=
35
35
30
600V
GE
40
40
40
=
15V
45
45
45
40
50
50
50 55
55
55
50
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
2500
2000
1500
1000
3500
3000
2500
2000
1500
1000
FIGURE 10, Turn-Off Delay Time vs Collector Current
140
120
100
120
100
500
500
FIGURE 12, Current Fall Time vs Collector Current
80
60
40
20
80
60
40
20
0
0
0
0
I
I
CE
CE
10 15
10 15
10 15
I
0
CE
V
V
R
V
V
R
V
R
L = 100 µH
, COLLECTOR TO EMITTER CURRENT (A)
R
, COLLECTOR TO EMITTER CURRENT (A)
CE
GE
G
CE
GE
G
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
G
= 5Ω
= 5Ω
V
=
= 600V
T
= 600V
= +15V
= +15V
=
=
GE
J
5Ω
5Ω, L
, JUNCTION TEMPERATURE (°C)
600V
=15V,T
25
20
20
20
=
V
100
25
25
25
J
=125°C
GE
µ
50
=15V,T
H, V
30
30
30
CE
J
35
35
35
=
=25°C
600V
75
40
40
40
45
45
45
100
50
50
50
125
55
55
55

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