APT50GN120B2G Microsemi Power Products Group, APT50GN120B2G Datasheet - Page 3

• Manufacturer Part Number: APT50GN120B2G
• Description: IGBT 1200V 134A 543W TMAX
• Manufacturer: Microsemi Power Products Group

Specifications of APT50GN120B2G

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 50A
• Current - Collector (ic) (max): 134A
• Power - Max: 543W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
160
140
120
100
160
140
120
100
3.5
2.5
1.5
1.0
0.5
80
60
40
20
80
60
40
20
0
0
4
3
2
0
-50
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
T
-25
J
2
, GATE-TO-EMITTER VOLTAGE (V)
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
2
10
I
15V
4
0
C
T
= 25A
4
J
= -55°C
T
25
12V
J
6
I
C
= 25°C
T
J
= 50A
12
6
= 125°C
11V
I
50
C
8
= 100A
<0.5 % DUTY CYCLE
250µs PULSE TEST
10V
8
10
75
T
14
J
= 25°C.
9V
10
J
100 125
12
8V
= 25°C)
7V
16
12
14
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
160
140
120
100
180
160
140
120
100
2.5
1.5
0.5
80
60
40
20
16
14
12
10
80
60
40
20
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
3
2
1
0
0
-50
-50
V
0
0
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 50A
-25
-25
50
2
V
Lead Temperature
Lead Temperature
T
I
GE
T
C
C
J
= 15V.
= 50A
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
Limited
Limited
100
0
4
V
0
GATE CHARGE (nC)
V
CE
15V
CE
25
= 600V
150
= 240V
25
6
I
50
C
= 100A
12V
200
I
50
C
8
= 25A
75 100 125 150
11V
10V
250
10
75
V
9V
CE
8V
100
J
300
12
= 960V
= 125°C)
7V
350
125
14