APT20GF120SRDQ1G Microsemi Power Products Group, APT20GF120SRDQ1G Datasheet

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APT20GF120SRDQ1G

Manufacturer Part Number
APT20GF120SRDQ1G
Description
IGBT 1200V 36A 200W D3PAK
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT20GF120SRDQ1G

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 15A
Current - Collector (ic) (max)
36A
Power - Max
200W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D³Pak (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through
technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-
taxial Diode (FRED) offers superior ruggedness and fast switching speed.
• Low Forward Voltage Drop
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Anti-parallel Diode
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
SSOA
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
FAST IGBT & FRED
1
(V
• High Frea. Switching to 20KHz
• Ultra Low Leakage Current
CE
CE
CE
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
GE
GE
J
= 25°C
= 100°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
C
GE
APT20GF120BRDQ1
APT20GF120BRDQ1G* APT20GF120SRDQ1G*
= 600µA, T
GE
GE
C
C
= 0V, I
= 15A, T
= 15A, T
= 0V, T
= 0V, T
C
j
= 600µA)
j
j
= 25°C)
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
All Ratings: T
2
2
1200V
C
= 25°C unless otherwise specified.
APT20GF120B_SRDQ1(G)
1200
APT20GF120SRDQ1
MIN
4.5
64A @ 1200V
APT20GF120B_SRDQ1(G)
-55 to 150
1200
±30
200
300
TYP
G
36
20
64
5.5
2.7
3.3
C
E
(B)
G
MAX
±100
6.5
3.2
1
6
G
D
C
C
E
Amps
Watts
3
UNIT
Units
Volts
Volts
PAK
mA
°C
nA
E
(S)

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APT20GF120SRDQ1G Summary of contents

Page 1

... Collector Cut-off Current (V I Gate-Emitter Leakage Current (V GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT20GF120BRDQ1 APT20GF120BRDQ1G* APT20GF120SRDQ1G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. • High Frea. Switching to 20KHz • Ultra Low Leakage Current All Ratings 25° ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Switching Safe Operating Area ...

Page 3

V = 15V -55° 25° 125° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T ...

Page 4

V = 15V 800V 25°C or 125° 4.3Ω 100µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, Turn-On Delay Time vs Collector Current = = ...

Page 5

TYPICAL PERFORMANCE CURVES 2,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.70 0. 0.9 0.50 0.7 0.40 0.5 0.30 0.3 0.20 0.10 0.1 0.05 ...

Page 6

APTXXXXXXX D.U.T. Figure 21, Inductive Switching Test Circuit 90% t d(off) 90 10% Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching Waveforms and Definitions T = ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I Maximum Average Forward Current (T (AV RMS Forward Current (Square wave, 50% duty) F (RMS) Non-Repetitive Forward Surge Current (T I FSM ...

Page 8

T = 175° 125° 25° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 25. Forward Current vs. Forward Voltage ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

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