APT13GP120BDQ1G Microsemi Power Products Group, APT13GP120BDQ1G Datasheet - Page 8

• Manufacturer Part Number: APT13GP120BDQ1G
• Description: IGBT 1200V 41A 250W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT13GP120BDQ1G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 13A
• Current - Collector (ic) (max): 41A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT13GP120BDQ1GMI; APT13GP120BDQ1GMI

Figure 28. Reverse Recovery Charge vs. Current Rate of Change
Figure 30. Dynamic Parameters vs. Junction Temperature
2500
2000
1500
1000
Figure 32. Junction Capacitance vs. Reverse Voltage
500
1.2
1.0
0.8
0.6
0.4
0.2
0.0
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
Figure 26. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
t
V
rr
F
F
T
/dt, CURRENT RATE OF CHANGE (A/µs)
, ANODE-TO-CATHODE VOLTAGE (V)
J
200
, JUNCTION TEMPERATURE (°C)
25
V
1
I
R
RRM
30A
T
, REVERSE VOLTAGE (V)
J
400
= -55°C
50
T
T
J
T
J
2
J
= 25°C
10
= 175°C
= 125°C
600
75
Q
3
rr
800
100
7.5A
t
rr
1000
Q
T
4
V
125
J
R
rr
100 200
= 125°C
= 800V
15A
1200
150
5
Figure 29. Reverse Recovery Current vs. Current Rate of ChangeTum tes-
Figure 27. Reverse Recovery Time vs. Current Rate of Change
Figure 31. Maximum Average Forward Current vs. CaseTemperature
400
350
300
250
200
150
100
50
25
20
15
10
35
30
25
20
15
10
0
5
0
5
0
0
0
25
-di
-di
T
V
F
J
R
F
/dt, CURRENT RATE OF CHANGE(A/µs)
= 125°C
/dt, CURRENT RATE OF CHANGE (A/µs)
= 800V
200
200
50
Case Temperature (°C)
400
400
75
7.5A
600
600
100
30A
30A
15A
15A
800
800
125
Duty cycle = 0.5
7.5A
T
1000
1000
J
T
150
V
J
R
= 175°C
= 125°C
= 800V
1200
1200
175