IXGH40N120C3D1 IXYS, IXGH40N120C3D1 Datasheet - Page 6

• Manufacturer Part Number: IXGH40N120C3D1
• Description: IGBT PT 1200V 40A W/DIODE TO247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH40N120C3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.4V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 380W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.4
• Tfi, Typ, Tj=25°c, Igbt, (ns): 57
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.60
• Rthjc, Max, Igbt, (°c/w): 0.33
• If, Tj=110°c, Diode, (a): 25
• Rthjc, Max, Diode, (ºc/w): 0.90
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
180
160
140
120
100
90
80
70
60
50
40
30
20
80
60
40
20
0
25
2
Switching Times vs. Junction Temperature
4
35
Switching Times vs. Gate Resistance
t
T
V
r
J
CE
6
= 125ºC, V
45
= 600V
Fig. 20. Inductive Turn-on
Fig. 18. Inductive Turn-on
8
10 12 14 16 18 20 22 24 26 28 30
55
T
I
J
t
C
I
d(on)
- Degrees Centigrade
GE
C
= 60A
= 30A
R
65
= 15V
G
- - - -
- Ohms
I
75
C
= 60A
t
R
V
r
CE
G
85
= 3Ω , V
= 600V
95
t
GE
d(on)
I
105
= 15V
C
= 30A
- - - -
115
125
60
55
50
45
40
35
30
25
20
15
22
21
20
19
18
17
16
15
90
80
70
60
50
40
30
20
10
0
15
Switching Times vs. Collector Current
20
t
R
V
T
r
CE
G
J
= 125ºC, 25ºC
= 3Ω , V
= 600V
25
Fig. 19. Inductive Turn-on
t
GE
d(on)
30
= 15V
IXGH40N120C3D1
- - - -
35
I
C
- Amperes
40
45
50
IXYS REF: G_40N120C3(6N)2-18-09-A
55
60
23
22
21
20
19
18
17
16
15
14