IXGH40N120C3D1 IXYS, IXGH40N120C3D1 Datasheet - Page 3

• Manufacturer Part Number: IXGH40N120C3D1
• Description: IGBT PT 1200V 40A W/DIODE TO247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH40N120C3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.4V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 380W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.4
• Tfi, Typ, Tj=25°c, Igbt, (ns): 57
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.60
• Rthjc, Max, Igbt, (°c/w): 0.33
• If, Tj=110°c, Diode, (a): 25
• Rthjc, Max, Diode, (ºc/w): 0.90
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0
0
5
6
Fig. 5. Collector-to-Emitter Voltage
1
1
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
vs. Gate-to-Emitter Voltage
8
2
2
V
9
V
CE
V
@ 125ºC
CE
@ 25ºC
GE
- Volts
- Volts
V
10
3
3
- Volts
GE
I
C
20A
= 15V
40A
= 80A
13V
11V
11
V
GE
4
4
= 15V
12
13V
11V
T
J
13
9V
7V
5V
= 25ºC
5
5
14
9V
7V
5V
15
6
6
100
250
225
200
175
150
125
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
90
80
70
60
50
40
30
20
10
75
50
25
0
0
4.0
25
0
Fig. 2. Extended Output Characteristics
4.5
3
V
GE
Fig. 4. Dependence of V
= 15V
50
6
5.0
13V
Fig. 6. Input Admittance
Junction Temperature
9
T
T
5.5
IXGH40N120C3D1
J
J
11V
7V
5V
9V
- Degrees Centigrade
= 125ºC
- 40ºC
V
12
75
25ºC
CE
V
6.0
@ 25ºC
GE
- Volts
15
- Volts
I
I
I
6.5
C
C
C
= 80A
100
= 40A
= 20A
18
7.0
CE(sat)
21
7.5
125
24
V
on
GE
= 15V
8.0
27
150
8.5
30