IXGH40N120C3D1 IXYS, IXGH40N120C3D1 Datasheet - Page 2

• Manufacturer Part Number: IXGH40N120C3D1
• Description: IGBT PT 1200V 40A W/DIODE TO247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH40N120C3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.4V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 380W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.4
• Tfi, Typ, Tj=25°c, Igbt, (ns): 57
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.60
• Rthjc, Max, Igbt, (°c/w): 0.33
• If, Tj=110°c, Diode, (a): 25
• Rthjc, Max, Diode, (ºc/w): 0.90
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
(T
Symbol
V
I
t
R
Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
rr
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
fs
on
off
on
off
F
ies
oes
res
thJC
thCK
thJC
g
ge
gc
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
2. Switching Times may Increase for V
Higher T
I
V
I
Inductive load, T
I
V
Note 2
Inductive load, T
I
V
Note 2
Test Conditions
I
I
Test Conditions
C
C
C
C
F
F
V
CE
CE
CE
J
= 30A,V
= 30A,V
R
= 40A, V
= 30A, V
= 30A, V
= 30A, V
PRELIMINARY TECHNICAL INFORMATION
or Increased R
= 300V
= 25V, V
= 600V, R
= 600V, R
GE
GE
GE
GE
GE
CE
GE
= 0V, Note 1
= 0V, -di
= 15V, V
= 15V
= 15V
= 10V, Note 1
G
G
= 0V, f = 1MHz
= 3Ω
= 3Ω
4,835,592
4,881,106
J
J
G
.
= 25°C
= 25°C
F
CE
/dt = 100A/μs, T
= 0.5 • V
4,931,844
5,017,508
5,034,796
CE
(Clamp) > 0.5 V
CES
5,049,961
5,063,307
5,187,117
T
T
J
J
J
= 150°C
= 100°C
= 100°C
5,237,481
5,381,025
5,486,715
Characteristic Values
18
Min.
CES
Min.
Characteristic Value
,
6,162,665
6,259,123 B1
6,306,728 B1
2930
1.80
0.55
3.50
1.60
0.21
240
142
130
177
298
Typ.
Typ.
30
93
19
62
17
33
57
17
35
100
1.6
0.33 °C/W
6,404,065 B1
6,534,343
6,583,505
1.00 mJ
100
0.9 °C/W
Max.
2.8
Max.
4
°C/W
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXGH40N120C3D1
TO-247 (IXGH) Outline
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
2 - Drain
Tab - Drain
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216