APT35GP120B2DQ2G Microsemi Power Products Group, APT35GP120B2DQ2G Datasheet - Page 3

• Manufacturer Part Number: APT35GP120B2DQ2G
• Description: IGBT 1200V 96A 543W TMAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT35GP120B2DQ2G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 35A
• Current - Collector (ic) (max): 96A
• Power - Max: 543W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT35GP120B2DQ2GMI; APT35GP120B2DQ2GMI

FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
120
100
80
70
60
50
40
30
20
10
80
60
40
20
0
0
6
5
4
3
2
1
0
-50
FIGURE 1, Output Characteristics(T
V
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
6
CE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
T
1
250µs PULSE
T
-25
J
J
, GATE-TO-EMITTER VOLTAGE (V)
= 125°C
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
2
8
T
J
0
3
= 125°C
T
J
T
= 25°C
10
J
4
25
= 25°C
T
J
= -55°C
5
50
12
6
<0.5 % DUTY CYCLE
250µs PULSE TEST
7
75
T
J
= 25°C.
14
8
J
100 125
= 25°C)
9
16
10
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
140
120
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
70
60
50
40
30
20
10
16
14
12
10
80
60
40
20
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
0
0
-50
V
0
0
0
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 35A
T
-25
20
J
V
= 125°C
T
GE
T
25
C
J
1
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
40
FIGURE 4, Gate Charge
0
T
GATE CHARGE (nC)
V
J
= 25°C
CE
60
25
V
50
= 600V
2
CE
= 240V
80
50
75
3
100 120 140 160
75 100 125 150
V
100
CE
4
J
= 960V
= 125°C)
125
5