APT30GP60BDQ1G Microsemi Power Products Group, APT30GP60BDQ1G Datasheet - Page 4

• Manufacturer Part Number: APT30GP60BDQ1G
• Description: IGBT 600V 100A 463W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT30GP60BDQ1G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 30A
• Current - Collector (ic) (max): 100A
• Power - Max: 463W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT30GP60BDQ1GMP; APT30GP60BDQ1GMP

FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
I
I
CE
CE
I
0
CE
0
0
0
V
V
R
V
T
R
L = 100 µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
R
CE
GE
G
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
G
= 25°C
= 5Ω
= 5Ω
= 400V
= +15V
= 400V
=
10
10
10
R
5Ω, L
G
10
, GATE RESISTANCE (OHMS)
,
V
T
T
J
20
20
20
GE
=
J
=125°C
100
=
= 15V
25 or 125°C,V
µ
20
H, V
30
30
30
CE
=
40
40
40
30
400V
GE
=
50
50
50
15V
40
60
60
60
70
70
70
50
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
1600
1400
1200
1000
1600
1400
1200
1000
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
100
800
600
400
200
800
600
400
200
FIGURE 12, Current Fall Time vs Collector Current
80
60
40
20
80
60
40
20
0
0
0
0
I
I
CE
CE
I
0
0
0
0
CE
V
R
L = 100 µH
, COLLECTOR TO EMITTER CURRENT (A)
R
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
G
=
T
=
=
10
10
10
J
5Ω
5Ω, L
, JUNCTION TEMPERATURE (°C)
400V
V
25
GE
T
=15V,T
20
20
20
=
J
=
100
T
125°C, V
J
µ
50
V
=
J
H, V
30
30
30
=125°C
GE
25°C, V
=15V,T
CE
GE
=
40
40
40
=
GE
400V
75
15V
J
=25°C
=
15V
50
50
50
100
60
60
60
125
70
70
70