APT15GN120BDQ1G Microsemi Power Products Group, APT15GN120BDQ1G Datasheet - Page 5

• Manufacturer Part Number: APT15GN120BDQ1G
• Description: IGBT 1200V 45A 195W TO247
• Manufacturer: Microsemi Power Products Group

Specifications of APT15GN120BDQ1G

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 15A
• Current - Collector (ic) (max): 45A
• Power - Max: 195W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT15GN120BDQ1GMI; APT15GN120BDQ1GMI

TYPICAL PERFORMANCE CURVES
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Figure 17, Capacitance vs Collector-To-Emitter Voltage
2,000
1,000
0.70
0.60
0.50
0.40
0.30
0.20
0.10
500
100
Junction
temp. (°C)
V
50
10
CE
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
(watts)
Power
-5
10
D = 0.9
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
RC MODEL
0.323
0.258
0.0600
10
30
-4
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
res
ies
oes
0.00192
0.0312
0.389
SINGLE PULSE
50
10
-3
140
100
Figure 20, Operating Frequency vs Collector Current
50
10
6
0
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 4.3Ω
= 800V
Figure 18,Minimim Switching Safe Operating Area
-2
50
45
40
35
30
25
20
15
10
5
0
5
°
I
°
C
C
0
C
V
, COLLECTOR CURRENT (A)
CE
200
, COLLECTOR TO EMITTER VOLTAGE
10
400
15
Note:
Peak T J = P DM x Z θJC + T C
600
Duty Factor D =
10
20
-1
t 1
800 1000 1200 1400
t 2
25
APT15GN120BDQ1(G)
t 1
/
t 2
30
F
f
f
P
max1
max2
max
diss
1.0
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f