IXGK120N120A3 IXYS, IXGK120N120A3 Datasheet - Page 4

• Manufacturer Part Number: IXGK120N120A3
• Description: IGBT PT 1200V 120A TO-264
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGK120N120A3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 100A
• Current - Collector (ic) (max): 240A
• Power - Max: 830W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 240
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 120
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.20
• Tfi, Typ, Tj=25°c, Igbt, (ns): 325
• Eoff, Typ, Tj=125°c, Igbt, (mj): 58
• Rthjc, Max, Igbt, (°c/w): 0.15
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
1.000
0.100
0.010
0.001
100
120
110
100
90
80
70
60
50
40
30
20
10
0
0.00001
0
0
f
20
= 1MHz
5
40
10
Fig. 7. Transconductance
60
Fig. 9. Capacitance
0.0001
15
80
I
C
V
T
CE
- Amperes
J
= - 40ºC
100
20
- Volts
C res
C oes
120
25ºC
25
Fig. 11. Maximum Transient Thermal Impedance
125ºC
C ies
140
0.001
30
160
35
180
Pulse Width - Seconds
200
40
0.01
280
240
200
160
120
80
40
16
14
12
10
0
8
6
4
2
0
200
0
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
T
R
dV / dt < 10V / ns
300
C
G
CE
J
G
50
= 120A
= 10mA
= 125ºC
= 1Ω
= 600V
400
100
0.1
500
Fig. 8. Gate Charge
150
Q
G
600
- NanoCoulombs
V
200
CE
700
- Volts
250
IXGK120N120A3
IXGX120N120A3
800
1
300
900
350
1000 1100 1200
IXYS REF: G_120N120A3(9P)2-19-09
400
450
10