IXGK120N120A3 IXYS, IXGK120N120A3 Datasheet - Page 3

• Manufacturer Part Number: IXGK120N120A3
• Description: IGBT PT 1200V 120A TO-264
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGK120N120A3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 100A
• Current - Collector (ic) (max): 240A
• Power - Max: 830W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 240
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 120
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.20
• Tfi, Typ, Tj=25°c, Igbt, (ns): 325
• Eoff, Typ, Tj=125°c, Igbt, (mj): 58
• Rthjc, Max, Igbt, (°c/w): 0.15
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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240
220
200
180
160
140
120
100
240
220
200
180
160
140
120
100
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
60
40
20
80
60
40
20
0
0
0.0
0.0
6
7
0.5
0.5
Fig. 5. Collector-to-Emitter Voltage
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
8
1.0
1.0
9
60A
120A
I
1.5
V
1.5
V
V
C
@ 125ºC
@ 25ºC
CE
10
CE
GE
= 240A
- Volts
- Volts
- Volts
V
11
GE
2.0
2.0
V
= 15V
GE
13V
11V
= 15V
12
13V
11V
2.5
2.5
T
13
J
= 25ºC
9V
7V
9V
7V
5V
3.0
3.0
14
3.5
3.5
15
360
320
280
240
200
160
120
200
180
160
140
120
100
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
40
80
60
40
20
0
0
4.0
-50
0
V
GE
Fig. 2. Extended Output Characteristics
1
4.5
-25
= 15V
V
GE
Fig. 4. Dependence of V
= 15V
2
13V
11V
5.0
0
Fig. 6. Input Admittance
Junction Temperature
3
T
J
T
- Degrees Centigrade
J
5.5
25
9V
7V
5V
= 125ºC
4
V
- 40ºC
V
@ 25ºC
25ºC
CE
GE
6.0
50
- Volts
- Volts
5
IXGK120N120A3
IXGX120N120A3
6
6.5
75
CE(sat)
7
I
100
7.0
I
I
C
C
C
= 240A
= 120A
= 60A
8
on
125
7.5
9
150
8.0
10