IXGK120N120A3 IXYS, IXGK120N120A3 Datasheet - Page 2

IGBT PT 1200V 120A TO-264

IXGK120N120A3

Manufacturer Part Number
IXGK120N120A3
Description
IGBT PT 1200V 120A TO-264
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGK120N120A3

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 100A
Current - Collector (ic) (max)
240A
Power - Max
830W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
240
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
120
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.20
Tfi, Typ, Tj=25°c, Igbt, (ns)
325
Eoff, Typ, Tj=125°c, Igbt, (mj)
58
Rthjc, Max, Igbt, (°c/w)
0.15
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGK120N120A3
Manufacturer:
CYPRESS
Quantity:
569
Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
fs
on
off
on
off
ies
oes
res
thJC
thCK
g(on)
ge
gc
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
= 25°C, Unless Otherwise Specified)
2. Switching Times may Increase for V
Higher T
I
V
I
Inductive load, T
I
V
Note 2
Inductive load, T
I
V
Note 2
Test Conditions
C
C
C
C
CE
CE
CE
J
PRELIMINARY TECHNICAL INFORMATION
or Increased R
= 60A, V
= I
= 100A, V
= 25V, V
= 960V, R
= 960V, R
= 100A, V
C110
, V
GE
CE
GE
GE
GE
G
G
= 15V, V
= 10V, Note 1
= 0V, f = 1 MHz
= 1Ω
= 1Ω
= 15V
4,835,592
4,881,106
= 15V
J
J
G
.
= 25°C
= 125°C
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
CE
(Clamp) > 0.8 V
5,049,961
5,063,307
5,187,117
CES
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
45
CES
,
6,162,665
6,259,123 B1
6,306,728 B1
9900
Typ.
0.15
655
240
420
180
490
325
685
680
73
70
40
67
10
30
75
15
58
33
0.15 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
°C/W
mJ
nC
nC
nC
mJ
mJ
mJ
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 (IXGK) Outline
PLUS 247
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
20.80
15.75
19.81
IXGK120N120A3
IXGX120N120A3
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
TM
Millimeter
5.45 BSC
2 - Drain (Collector)
3 - Source (Emitter)
(IXGX) Outline
7,005,734 B2
7,063,975 B2
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
Inches
7,157,338B2
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190

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