IRG4PSH71UDPBF International Rectifier, IRG4PSH71UDPBF Datasheet - Page 4

• Manufacturer Part Number: IRG4PSH71UDPBF
• Description: IGBT W/DIODE 1200V 99A SUPER247
• Manufacturer: International Rectifier

Specifications of IRG4PSH71UDPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 70A
• Current - Collector (ic) (max): 99A
• Power - Max: 350W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 99A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 350W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -5°C To +150°C
• Rohs Compliant: Yes
• Package: TO-274AA
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 99
• Ic @ 100c (a): 50
• Vce(on)@25c Typ (v): 2.52
• Vce(on)@25c Max (v): 2.70
• Ets Typ (mj): 18.2
• Ets Max (mj): 19.7
• Vf Typ: 2.92
• Pd @25c (w): 350
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4PSH71UDPBF

IRG4PSH71UDPbF
1E-005
Fig. 4 - Maximum Collector Current vs. Case
0.0001
0.001
4
0.01
100
0.1
80
60
40
20
0
1
1E-006
25
D = 0.50
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
T J , Junction Temperature (°C)
50
Temperature
SINGLE PULSE
( THERMAL RESPONSE )
75
1E-005
100
V GE = 15V
125
t 1 , Rectangular Pulse Duration (sec)
0.0001
150
τ
Fig. 5 - Collector-to-Emitter Voltage vs.
J
4.0
3.5
3.0
2.5
2.0
1.5
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci= i/Ri
-60 -40 -20
0.001
V GE = 15V
380µs PULSE WIDTH
R
1
R
Junction Temperature
1
T J , Junction Temperature (°C)
τ
2
R
τ
2
2
R
0
2
τ
20
C
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
40
Ri (°C/W)
0.01
0.253
0.1057
60
I C = 35A
I C = 140A
80 100 120 140 160
I C = 70A
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0.009159
0.038041
τi (sec)
0.1