IRG4PSH71UDPBF International Rectifier, IRG4PSH71UDPBF Datasheet
IRG4PSH71UDPBF
Specifications of IRG4PSH71UDPBF
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IRG4PSH71UDPBF Summary of contents
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... Junction-to-Case- Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Recommended Clip Force W t Weight www.irf.com IRG4PSH71UDPbF G n-channel Parameter ™ d 300 (0.063 in. (1.6mm) from case) Parameter Min. ––– ––– ––– ––– ...
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... IRG4PSH71UDPbF Electrical Characteristics @ T Parameter Collector-to-Emitter Breakdown Voltage V (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Threshold Voltage temp. coefficient GE(th) J gfe Forward Transconductance I Zero Gate Voltage Collector Current ...
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... I=I 1000 100 150° 25° 15V < 60µs PULSE WIDTH 0 Collector-to-Emitter Voltage (V) Fig Typical Output Characteristics www.irf.com IRG4PSH71UDPbF Frequency ( kHz ) of fundamental; for triangular wave, I=I RMS 1000.0 100 150°C 10.0 1.0 0 GE, Gate-to-Emitter Voltage (V) Fig Typical Transfer Characteristics Duty cycle : 50 125° ...
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... IRG4PSH71UDPbF 100 100 Junction Temperature (°C) Fig Maximum Collector Current vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE 0.0001 ( THERMAL RESPONSE ) 1E-005 1E-006 1E-005 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 4 15V 15V 380µs PULSE WIDTH 3 ...
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... Collector-to-Emitter Voltage (V) Fig Typical Capacitance vs. Collector-to-Emitter Voltage 960V 15V 25° 70A Gate Resistance (Ω) Fig Typical Switching Losses vs. Gate Resistance www.irf.com IRG4PSH71UDPbF 400V SHORTED 70A 100 1000 0 Fig Typical Gate Charge vs. 1000 5.0 Ω 15V 960V 100 10 1 -60 -40 - Fig ...
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... IRG4PSH71UDPbF 5.0Ω 150° 15V 960V 100 Collector Current (A) Fig Typical Switching Losses vs. Collector-to-Emitter Current 1000 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 1000 20V 125° 100 120 140 160 100 150° 25°C 1 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 ...
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... 200V 125° 25°C 0 100 200 300 400 500 600 700 800 900 1000 µs) Fig Typical Stored Charge vs. di www.irf.com IRG4PSH71UDPbF 100 140A 70A 35A 100 200 300 400 500 600 700 800 900 1000 Fig Typical Recovery Current vs. di ...
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... IRG4PSH71UDPbF Same type device as D.U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on 90% D.U.T. 10 d(on d(off) f Fig. 18b - Test Waveforms for Circuit of Fig ...
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... Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. Figure 20. Pulsed Collector Current IRG4PSH71UDPbF Test Circuit L C Test Circuit 9 ...
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... IRG4PSH71UDPbF Case Outline and Dimensions — Super-247 Super TO-247™ package is not recommended for Surface Mount Application. Notes: Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20) GE ‚ V =80%( =20V, L=10µ CES GE ≤ ≤ ƒ Pulse width 80µ ...
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... TOP Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.09/04 IRG4PSH71UDPbF PART NUMBER 719C 89 DATE CODE YEAR 7 = 1997 ...