STGY40NC60VD STMicroelectronics, STGY40NC60VD Datasheet - Page 7

• Manufacturer Part Number: STGY40NC60VD
• Description: IGBT N-CHAN 50A 600V MAX247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGY40NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 260W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: MAX247™
• Transistor Type: IGBT
• Dc Collector Current: 80A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 260W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-6736-5; STGY40NC60VD

Figure 15: Thermal Impedance
Figure 16: Turn-Off SOA
Figure 17: Emitter-Collector Diode Character-
istics
Figure 18: Ic vs Frequency
For a fast IGBT suitable for high frequency appli-
cations, the typical collector current vs. maximum
operating frequency curve is reported. That fre-
quency is defined as follows:
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
considering T = T
2) The conduction losses are:
with 50% of duty cycle, V
@125°C.
3) Power dissipation during ON & OFF commuta-
tions is due to the switching frequency:
4) Typical values @ 125°C for switching losses are
used (test conditions: V
R
ergy is included in the E
tail of the collector current is included in the E
measurements (see note 3).
G
= 3.3 Ohm). Furthermore, diode recovery en-
f
MAX
P
SW
P
P
= (P
C
J
D
= (E
= I
- T
= T / R
D
C
C
ON
ON
- P
CE
* V
= 125 °C- 75 °C = 50°C
C
(see note 2), while the
+ E
CE(SAT)
= 390V, V
) / (E
CESAT
STGY40NC60VD
THJ-C
OFF
ON
) * freq.
*
typical value
+ E
GE
OFF
= 15V,
)
7/11
OFF