STGY40NC60VD STMicroelectronics, STGY40NC60VD Datasheet
STGY40NC60VD
Specifications of STGY40NC60VD
STGY40NC60VD
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STGY40NC60VD Summary of contents
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... N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH™ IGBT Figure 1: Package (Max) I CE(sat) C @25°C @100°C < 2 Figure 2: Internal Schematic Diagram MARKING PACKAGE GY40NC60VD STGY40NC60VD Max247 Weight: 4.96gr ± 0.01 Max Clip Pressure: 150 N/mm PACKAGING Max247 TUBE Rev.8 1/11 ...
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... STGY40NC60VD Table 3: Absolute Maximum ratings Symbol V Collector-Emitter Voltage (V CES V Reverse Battery Protection ECR V Gate-Emitter Voltage GE I Collector Current (continuous) at 25°C (#) C I Collector Current (continuous) at 100°C (#) C I (1) Collector Current (pulsed Diode R Forward Current Total Dissipation at T TOT Derating Factor T Storage Temperature ...
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... V = 390 3 15V, Tj 125°C (see Figure 19) Test Conditions V = 390 3 °C J (see Figure 19 390 3 125 °C (see Figure 19) STGY40NC60VD Min. Typ. Max. Unit 20 S 4550 pF 350 pF 105 pF 214 200 A Min. Typ. Max. Unit A/µs 2060 450 µJ 330 1900 A/µs 640 µJ Min ...
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... STGY40NC60VD Table 10: Collector-Emitter Diode Symbol Parameter V Forward On-Voltage f t Reverse Recovery Time Reverse Recovery Charge Q rr Reverse Recovery Current I rrm Softness factor of the diode S t Reverse Recovery Time Reverse Recovery Charge Q rr Reverse Recovery Current I rrm Softness factor of the diode S 4/11 ...
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... Figure 3: Output Characteristics Figure 4: Transconductance Figure 5: Collector-Emitter On Voltage vs Col- lector Current STGY40NC60VD Figure 6: Transfer Characteristics Figure 7: Collector-Emitter On Voltage vs Tem- perature Figure 8: Normalized Gate Threshold vs Tem- perature 5/11 ...
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... STGY40NC60VD Figure 9: Normalized Breakdown Voltage vs Temperature Figure 10: Capacitance Variations Figure 11: Total Switching Losses vs Gate Re- sistance 6/11 Figure 12: Gate Charge vs Gate-Emitter Volt- age Figure 13: Total Switching Losses vs Temper- ature Figure 14: Total Switching Losses vs Collector Current ...
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... Figure 15: Thermal Impedance Figure 16: Turn-Off SOA Figure 17: Emitter-Collector Diode Character- istics STGY40NC60VD Figure 18 Frequency For a fast IGBT suitable for high frequency appli- cations, the typical collector current vs. maximum operating frequency curve is reported. That fre- quency is defined as follows MAX The maximum power dissipation is limited by ...
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... STGY40NC60VD Figure 19: Test Circuit for Inductive Load Switching Figure 20: Switching Waveforms 8/11 Figure 21: Gate Charge Test Circuit Figure 22: Diode Recovery Times Waveform ...
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... Table 11: Revision History Date Revision 07-June-2004 7 14-Jul-2004 8 Description of Changes Stylesheet update. Added Max Values see Table 8 and 9 Added Figure 22 Figure 19 updated, some datas have been modified STGY40NC60VD 9/11 ...
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... STGY40NC60VD DIM 10/11 Max247 MECHANICAL DATA mm MIN. TYP. MAX. 4.70 5.30 2.20 2.60 1.00 1.40 2.00 2.40 3.00 3.40 0.40 0.80 19.70 20.30 5.35 5.55 15.30 15.90 14.20 15.20 3.70 4.30 inch MIN. TYP. MAX. P025Q ...
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... All other names are the property of their respective owners Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES STGY40NC60VD 11/11 ...