IXGH16N170 IXYS, IXGH16N170 Datasheet
Home Discrete Semiconductor Products IGBTs - Single IXGH16N170
Manufacturer Part Number
IXGH16N170
Description
IGBT 1700V 32A TO-247AD
Specifications of IXGH16N170
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
3.5V @ 15V, 16A
Current - Collector (ic) (max)
32A
Power - Max
190W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1700
Ic25, Tc=25°c, Igbt, (a)
32
Ic90, Tc=90°c, Igbt, (a)
16
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Igbt, (ns)
770
Eoff, Typ, Tj=125°c, Igbt, (mj)
11.2
Rthjc, Max, Igbt, (°c/w)
0.65
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IXGH16N170 AH1
High Voltage
IGBT
Symbol
BV
V
I
I
V
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
© 2006 IXYS CORPORATION All rights reserved
GES
CM
CES
C25
C90
JM
stg
L
GE(th)
CE(sat)
GEM
J
SOLD
CES
CGR
GES
C
d
CES
Test Conditions
I
I
V
V
V
I
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (M3)
TO-247 AD
TO-268
C
C
C
GE
J
J
C
C
C
GE
C
CE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 μA, V
= 250 μA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
GE
GE
VJ
CES
= 15 V
= ±20 V
= 125°C, R
GE
CE
= V
= 0 V
GE
GE
= 1 MΩ
G
= 10 Ω
T
T
T
T
(T
J
J
J
J
J
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C, unless otherwise specified)
IXGH 16N170
IXGT 16N170
1700
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
Typ.
2.7
3.3
1.13/10Nm/lb.in.
I
CM
1700
1700
±20
±30
= 40
260
190
150
300
32
16
80
CES
Max.
±100
6
4
500
5.0
3.5
50
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
V
A
A
A
A
g
g
V
I
V
TO-268 (D3-Pak) (IXGT)
Features
Applications
Advantages
TO-247 (IXGH)
G = Gate,
E = Emitter,
C25
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
High current handling capability
MOS Gate turn-on
- drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Capacitor discharge & pulser circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
CES
CE(sat)
G
C
= 1700
=
=
G
E
C = Collector,
TAB = Collector
E
3.5
DS98996C(07/06)
32
C (TAB)
C (TAB)
A
V
V
Related parts for IXGH16N170
IXGH16N170 Summary of contents
... C CE GE(th 0.8 • CES CES ± GES C90 GE CE(sat) © 2006 IXYS CORPORATION All rights reserved IXGH 16N170 IXGT 16N170 Maximum Ratings 1700 = 1 MΩ 1700 GE ±20 ± Ω 0.8 V 190 -55 ... +150 150 -55 ... +150 300 260 1.13/10Nm/lb.in. Characteristic Values (T = 25°C, unless otherwise specified) J Min ...
... G t d(off off R thJC (TO-247) R thCS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. Max. ...
... olts CE Fig. 3. Output Characteristics @ 125 Deg 0 2.5 3 olts CE Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emiiter voltage olts GE © 2006 IXYS CORPORATION All rights reserved 3 0.8 0.6 4.5 5.5 6.5 56 º 32A IXGH 16N170 IXGT 16N170 Fig. 2. Extended Output Characteristics @ 25 deg ...
... A mperes C Fig. 9. Dependence º 125 15V 1360V Ohm mperes C Fig. 11. Gate Charge 600V nanoCoulombs G IXYS reserves the right to change limits, test conditions, and dimensions off Ohm 0000 1 000 IXGH 16N170 IXGT 16N170 Fig. 8. Dependence off I C º 125 15V 1360V ...
... Ope rating Are º 125 10Ω dV/dT < 10V/ns 0 100 300 500 700 900 olts 0.1 0.01 0.0001 0.001 © 2006 IXYS CORPORATION All rights reserved 1100 1300 1500 1700 Fig. 14. Maximum T ransient T hermal Resistance 0.01 Pulse Width - Seconds IXGH 16N170 IXGT 16N170 0 ...
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