IXGH16N170 IXYS, IXGH16N170 Datasheet - Page 4

• Manufacturer Part Number: IXGH16N170
• Description: IGBT 1700V 32A TO-247AD
• Manufacturer: IXYS

Specifications of IXGH16N170

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 16A
• Current - Collector (ic) (max): 32A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1700
• Ic25, Tc=25°c, Igbt, (a): 32
• Ic90, Tc=90°c, Igbt, (a): 16
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Igbt, (ns): 770
• Eoff, Typ, Tj=125°c, Igbt, (mj): 11.2
• Rthjc, Max, Igbt, (°c/w): 0.65
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
24
22
20
21
1 8
1 5
1 2
1 8
1 6
1 4
1 2
1 0
1 5
1 2
9
6
3
0
9
6
3
0
1 6
0
0
T
V
V
T
J
V
I
I
J
G E
C E
C
G
= 125
C E
= -40
1 8
1 0
= 1 6A
= 1 0m A
125
8
= 1360V
= 15V
= 600V
Fig. 9. Dependence of E
25
Fig. 7. T ransconductance
º
º
º
R
º
C
C
C
20
20
C
G
Fig. 11. Gate Charge
1 6
= 50 Ohm s
Q
G
22
30
I
I
- nanoCoulombs
C
C
24
- A mperes
- A mperes
40
24
32
R
50
G
26
= 10 Ohm s
off
40
on I
60
28
C
48
70
30
56
80
32
1 0000
1 000
28
25
22
1 00
24
22
20
31
1 9
1 6
1 3
1 0
1 8
1 6
1 4
1 2
1 0
7
1 0
8
0
0
0
V
V
R
R
Fig. 10. Dependence of E
T
V
V
G E
C E
G
G
J
G E
C E
f = 1 M H z
= 10 Ohm s
= 50 Ohm s - - - - -
= 125
= 1360V
5
= 15V
25
Fig. 8. Dependence of E
= 15V
= 1360V
1 0
T
Fig. 12. Capacitance
º
1 0
J
C
- Degrees Centigrade
50
20
1 5
R
V
G
CE
- Ohms
I
I
30
75
- V olts
C
20
C
= 32A
IXGH 16N170
IXGT 16N170
= 16A
off
25
on T emperature
1 00
40
off
I
on R
C
I
30
C ies
C oes
C res
C
= 32A
= 16A
G
50
1 25
35
60
1 50
40