IXGH10N100 IXYS, IXGH10N100 Datasheet
IXGH10N100
Manufacturer Part Number
IXGH10N100
Description
IGBT 20A 1000V TO-247AD
Manufacturer
IXYS
Datasheet
1.IXGH10N100.pdf
(2 pages)
Specifications of IXGH10N100
Voltage - Collector Emitter Breakdown (max)
1000V
Vce(on) (max) @ Vge, Ic
3.5V @ 15V, 10A
Current - Collector (ic) (max)
20A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGH10N100
Manufacturer:
IXYS
Quantity:
15 500
Company:
Part Number:
IXGH10N100A
Manufacturer:
IXYS
Quantity:
15 500
Company:
Part Number:
IXGH10N100AU1
Manufacturer:
IXYS
Quantity:
15 500
Company:
Part Number:
IXGH10N100U1
Manufacturer:
IXYS
Quantity:
18 000
Low V
High speed IGBT
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
BV
V
I
I
V
© 1996 IXYS All rights reserved
CES
C25
C90
CM
GES
J
JM
stg
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
CES
CE(sat)
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 300 H
T
Mounting torque (M3)
Test Conditions
I
I
V
V
V
I
C
C
C
J
J
C
C
C
C
GE
CE
GE
CE
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 90 C
= 25 C, 1 ms
= 15 V, T
= 25 C
IGBT
= 3 mA, V
= 250 A, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
GE
GE
VJ
CES
GE
= 15 V
= 125 C, R
= 20 V
CE
= 0 V
= V
GE
GE
= 1 M
G
= 150
T
T
10N100
10N100A
(T
J
J
= 25 C
= 125 C
J
= 25 C, unless otherwise specified)
1000
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
IXGH 10 N100
IXGH 10 N100A
@ 0.8 V
Maximum Ratings
I
typ.
1.13/10 Nm/lb.in.
CM
1000
1000
= 20
100
150
300
CES
20
30
20
10
40
6
max.
250
100
3.5
4.0
5
1
mA
nA
W
V
V
V
V
A
A
A
A
V
V
V
V
g
C
C
C
C
A
TO-247 AD
G = Gate,
E = Emitter,
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
International standard package
JEDEC TO-247 AD
2nd generation HDMOS
Low V
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Voltage rating guaranteed at high
temperature (125 C)
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Easy to mount with 1 screw
(isolated mounting screw hole)
High power density
1000 V 20 A
1000 V 20 A
V
G
CES
C
CE(sat)
E
C = Collector,
TAB = Collector
I
C25
TM
93004D (3/96)
process
V
3.5 V
4.0 V
CE(sat)
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IXGH10N100 Summary of contents
Page 1
... I = 250 GE(th 0.8 • V CES CE CES GES CE(sat) C C90 GE © 1996 IXYS All rights reserved IXGH 10 N100 IXGH 10 N100A Maximum Ratings 1000 = 1 M 1000 150 0.8 V CES 100 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 6 300 Characteristic Values ( unless otherwise specified) J min. typ. ...
Page 2
... IXGH 10N100 and IXGH 10N100A characteristic curves are located on the IXGH 10N100U1 and IXGH 10N100AU1 data sheets. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T ...