STGW20NC60VD STMicroelectronics, STGW20NC60VD Datasheet - Page 4

• Manufacturer Part Number: STGW20NC60VD
• Description: IGBT N-CHAN 60A 600V TO247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW20NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-4357-5

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
V
j
V
(BR)CES
=25°C unless otherwise specified)
CE(sat)
C
I
I
C
C
GE(th)
Q
Q
CES
GES
Q
g
oes
ies
res
ge
gc
fs
g
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Collector-emitter breakdown
voltage (V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector-cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance
Static
Dynamic
GE
= 0)
Parameter
Parameter
CE
GE
= 0)
= 0)
Doc ID 9983 Rev 5
V
V
V
(see Figure 18)
I
V
V
V
V
V
V
V
C
GE
CE
CE
GE
GE
CE
CE
CE
GE
CE
= 1 mA
=15 V, I
=15 V, I
= V
=600 V, T
= 25V, f = 1 MHz, V
= 390V, I
= 15V,
= 600 V
= ± 20V
= 15 V
Test conditions
Test conditions
GE
, I
,
C
C
C
I
C
=20 A
=20 A,T
= 250 µA
C
j
= 125 °C
= 20 A
= 20A,
j
=125 °C
GE
= 0
Min.
Min.
3.75
600
-
-
STGW20NC60VD
2200
Typ.
Typ.
225
100
1.8
1.7
50
16
45
15
Max. Unit
±100
Max
5.75
140
250
2.5
1
Unit
mA
nC
nC
nC
µA
nA
pF
pF
pF
V
V
V
V
S