STGW20NC60VD STMicroelectronics, STGW20NC60VD Datasheet
STGW20NC60VD
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STGW20NC60VD Summary of contents
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... N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT Figure 1: Package (Max) I CE(sat) C @25°C @100°C < 2 Figure 2: Internal Schematic Diagram MARKING PACKAGE GW20NC60VD STGW20NC60VD TO-247 Weight: 4.41gr ± 0.01 Max Clip Pressure: 150 N/mm PACKAGING TO-247 TUBE Rev. 4 1/11 ...
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... STGW20NC60VD Table 3: Absolute Maximum ratings Symbol V Collector-Emitter Voltage (V CES V Reverse Battery Protection ECR V Gate-Emitter Voltage GE I Collector Current (continuous) at 25°C (#) C I Collector Current (continuous) at 100°C (#) C I (1) Collector Current (pulsed Diode RMS Forward Current Total Dissipation at T TOT Derating Factor ...
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... V = 390 3 15V, Tj 125°C (see Figure 19) Test Conditions V = 390 3 °C J (see Figure 19 390 3 125 °C (see Figure 19) STGW20NC60VD Min. Typ. Max. Unit 15 S 2200 pF 225 100 140 100 A Min. Typ. Max. Unit 1600 A/µs 220 300 µ 11.5 ns 1500 A/µs 450 µ ...
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... STGW20NC60VD Table 10: Collector-Emitter Diode Symbol Parameter V Forward On-Voltage f t Reverse Recovery Time Reverse Recovery Charge Q rr Reverse Recovery Current I rrm Softness factor of the diode S t Reverse Recovery Time Reverse Recovery Charge Q rr Reverse Recovery Current I rrm Softness factor of the diode S 4/11 ...
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... Figure 3: Output Characteristics Figure 4: Transconductance Figure 5: Collector-Emitter On Voltage vs Col- lector Current STGW20NC60VD Figure 6: Transfer Characteristics Figure 7: Collector-Emitter On Voltage vs Tem- perature Figure 8: Normalized Gate Threshold vs Tem- perature 5/11 ...
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... STGW20NC60VD Figure 9: Normalized Breakdown Voltage vs Temperature Figure 10: Capacitance Variations Figure 11: Total Switching Losses vs Gate Re- sistance 6/11 Figure 12: Gate Charge vs Gate-Emitter Volt- age Figure 13: Total Switching Losses vs Temper- ature Figure 14: Total Switching Losses vs Collector Current ...
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... Figure 15: Thermal Impedance Figure 16: Turn-Off SOA Figure 17: Emitter-Collector Diode Character- istics STGW20NC60VD Figure 18 Frequency For a fast IGBT suitable for high frequency appli- cations, the typical collector current vs. maximum operating frequency curve is reported. That fre- quency is defined as follows MAX The maximum power dissipation is limited by ...
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... STGW20NC60VD Figure 19: Test Circuit for Inductive Load Switching Figure 20: Switching Waveforms 8/11 Figure 21: Gate Charge Test Circuit Figure 22: Diode Recovery Times Waveform ...
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... Table 11: Revision History Date Revision 12-July-2004 4 Description of Changes Stylesheet update. Added Max Values see Table 8 and 9 Added Figure 22 STGW20NC60VD 9/11 ...
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... STGW20NC60VD DIM. MIN. A 4.85 A1 2.20 b 1.0 b1 2.0 b2 3.0 c 0.40 D 19.85 E 15. 14.20 L1 3.70 L2 øP 3.55 øR 4.50 S 10/11 TO-247 MECHANICAL DATA mm. TYP MAX. MIN. 5.15 0.19 2.60 0.086 1.40 0.039 2.40 0.079 3.40 0.118 0.80 0.015 20.15 0.781 15.75 0.608 5.45 14 ...
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... All other names are the property of their respective owners Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES STGW20NC60VD 11/11 ...