STGW20NC60VD STMicroelectronics, STGW20NC60VD Datasheet - Page 3

• Manufacturer Part Number: STGW20NC60VD
• Description: IGBT N-CHAN 60A 600V TO247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW20NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-4357-5

ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
Table 9: Switching Off
(3)Turn-off losses include also the tail of the collector current.
Symbol
Symbol
Symbol
(di/dt)
(di/dt)
Eon (2)
Eon (2)
E
E
t
t
g
t
t
t
t
r
r
C
C
C
Q
d
d
Q
d(on)
d(on)
(V
off
(V
off
fs
I
E
E
Q
CL
(
(
oes
t
t
res
t
t
ies
(1)
ge
gc
off
off
r
r
f
ts
f
ts
g
off
off
(3)
(3)
on
on
)
)
)
)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-Off SOA Minimum
Current
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Turn-off Switching Loss
Total Switching Loss
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Turn-off Switching Loss
Total Switching Loss
Parameter
Parameter
Parameter
V
V
V
V
(see Figure 21)
V
R
V
R
(see Figure 19)
V
R
125°C
(see Figure 19)
V
R
T
(see Figure 19)
V
R
Tj = 125 °C
(see Figure 19)
CE
CE
CE
GE
clamp
CC
CC
J
G
G
G
cc
cc
GE
GE
= 3.3 , V
= 3.3 , V
= 25 °C
= 10
= 390 V, I
= 390 V, I
= 15 V
= 25V, f = 1 MHz, V
= 390 V, I
= 15V,
= 390 V, I
= 390 V, I
= 3.3
= 3.3
= 480 V Tj = 150°C
Test Conditions
Test Conditions
Test Conditions
,
V
I
GE
GE
C
, V
, V
GE
C
C
= 20 A
C
C
C
= 15V, Tj= 25°C
= 15V, Tj=
= 20 A,
= 20 A,
= 15V
GE
GE
= 20 A,
= 20 A
= 20 A
= 15 V
= 15 V
GE
= 0
Min.
Min.
Min.
100
2200
1600
1500
Typ.
Typ.
11.5
1220
225
100
220
450
Typ.
100
330
550
150
130
770
15
50
16
45
31
11
31
28
75
66
STGW20NC60VD
Max.
Max.
Max.
140
300
450
750
A/µs
A/µs
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
µJ
µJ
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3/11
S
A
J
J
J
J