STGW45NC60VD STMicroelectronics, STGW45NC60VD Datasheet - Page 9

• Manufacturer Part Number: STGW45NC60VD
• Description: IGBT N-CH 45A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW45NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 90A
• Power - Max: 270W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-9063-5

STGW45NC60VD
2.2
Figure 14. Thermal impedance
Figure 16. Emitter-collector diode
120
110
100
IFM(A)
90
80
70
60
50
40
30
20
10
0
0
1
Frequency applications
For a fast IGBT suitable for high frequency applications, the typical collector current vs.
maximum operating frequency curve is reported. That frequency is defined as follows:
f
●
Equation 1
P
considering ∆T = T
●
characteristics
MAX
D
(Typical values)
(Typical values)
= ∆T / R
Tj=125°C
Tj=125°C
The maximum power dissipation is limited by maximum junction to case thermal
resistance:
The conduction losses are:
= (P
2
(Maximum values)
(Maximum values)
Tj=125°C
Tj=125°C
D
- P
THJ-C
C
3
VFM(V)
) / (E
J
ON
- T
4
C
+ E
= 125 °C - 75 °C = 50 °C
OFF
(Maximum values)
Tj=25°C
5
)
6
Figure 15. Turn-off SOA
Figure 17. I
C
vs. frequency
Electrical characteristics
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