STGW45NC60VD STMicroelectronics, STGW45NC60VD Datasheet - Page 4

• Manufacturer Part Number: STGW45NC60VD
• Description: IGBT N-CH 45A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW45NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 90A
• Power - Max: 270W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-9063-5

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 4.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
V
CASE
V
(BR)CES
g
CE(sat)
C
I
I
C
GE(th)
C
Q
Q
CES
GES
fs
Q
oes
res
ies
ge
gc
g
(1)
=25 °C unless otherwise specified)
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static
Dynamic
GE
GE
= 0)
= 0)
Parameter
Parameter
CE
= 0)
I
V
V
V
V
V
V
V
C
V
V
V
(see Figure 19)
GE
GE
GE
CE
CE
CE
CE
CE
CE
GE
= 1 mA
= V
= 600 V, T
= 600 V
= 15 V, I
= 15 V, I
= ± 20 V
= 15 V
= 25 V, f = 1 MHz, V
= 390 V, I
= 15 V
GE
Test conditions
Test conditions
, I
,
C
I
C
C
C
=1 mA
= 30 A
C
= 30 A
= 30 A,T
C
= 125 °C
= 30 A,
C
=125 °C
GE
= 0
Min. Typ. Max. Unit
Min. Typ. Max. Unit
3.75
600
STGW45NC60VD
290
298
126
59
16
46
1.8
1.7
0
20
±100
5.75
500
2.4
5
mA
nC
nC
nC
µA
nA
pF
pF
pF
V
V
V
V
S