STGP19NC60S STMicroelectronics, STGP19NC60S Datasheet - Page 9

• Manufacturer Part Number: STGP19NC60S
• Description: IGBT N-CH 600V 20A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP19NC60S

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 12A
• Current - Collector (ic) (max): 50A
• Power - Max: 125W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-7012-5

STGB19NC60S, STGP19NC60S
2.2
Frequency applications
For a fast IGBT suitable for high frequency applications, the typical collector current vs.
maximum operating frequency curve is reported. That frequency is defined as follows:
f
●
Equation 1
P
considering ΔT = T
●
Equation 2
P
with 50% of duty cycle, V
●
Equation 3
P
Typical values @ 125°C for switching losses are used (test conditions: V
V
Note
MAX
GE
D
C
SW
= ΔT / R
= I
=15V, R
The maximum power dissipation is limited by maximum junction to case thermal
resistance:
The conduction losses are:
Power dissipation during ON & OFF commutations is due to the switching frequency:
= (E
= (P
1), while the tail of the collector current is included in the E
C
* V
ON
D
CE(SAT)
- P
THJ-C
G
+ E
= 10 Ohm). Furthermore, diode recovery energy is included in the E
C
) / (E
OFF
* δ
J
) * freq.
ON
- T
C
+ E
CESAT
= 125 °C- 75 °C = 50°C
OFF
Doc ID 13688 Rev 5
)
typical value @125°C.
OFF
Electrical characteristics
measurements.
CE
= 480V,
ON
(see
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