STGP19NC60S STMicroelectronics, STGP19NC60S Datasheet - Page 4

• Manufacturer Part Number: STGP19NC60S
• Description: IGBT N-CH 600V 20A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP19NC60S

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 12A
• Current - Collector (ic) (max): 50A
• Power - Max: 125W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-7012-5

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
V
V
j
(BR)CES
CE(sat)
I
I
= 25°C unless otherwise specified)
C
GE(th)
C
C
Q
Q
CES
GES
g
Q
oes
ies
res
fs
ge
gc
g
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static
Dynamic
GE
GE
= 0)
= 0)
Parameter
Parameter
CE
= 0)
Doc ID 13688 Rev 5
V
V
V
V
Figure 18
I
V
V
V
V
V
V
C
CE
GE
CE
GE
GE
GE
GE
CE
CE
CE
CE
= 1mA
= V
= 600 V
= 600 V, T
= 15V, I
= 15V, I
= ±20V, V
= 25V, f = 1MHz,
= 0
= 480V, I
= 15V,
= 15V
Test conditions
Test conditions
GE
, I
,
I
C
C
C
C
= 12A
=12A,T
= 250 µA
C
= 12A
CE
j
= 12A,
=125°C
= 0
j
=125°C
STGB19NC60S, STGP19NC60S
Min.
Min.
600
4.2
-
-
1190
Typ.
28.5
54.5
25.8
Typ.
1.55
1.35
135
8.7
10
Max.
±100
Max.
150
1.9
6.2
-
-
1
Unit
Unit
mA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
V
S
V