STGW40N120KD STMicroelectronics, STGW40N120KD Datasheet - Page 6

• Manufacturer Part Number: STGW40N120KD
• Description: IGBT 1200V 80A 240W TO247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW40N120KD

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.85V @ 15V, 30A
• Current - Collector (ic) (max): 80A
• Power - Max: 240W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-10000-5

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Figure 2.
Figure 4.
V
CE
V
G
I
C
Test circuits
Test circuit for inductive load
switching
Switching waveform
Td(on)
Ton
Tr(Ion)
Td(off)
Toff
Tcross
Tr(Voff)
Tf
90%
10%
90%
10%
Doc ID 15360 Rev 3
AM01504v1
AM01506v1
90%
10%
Figure 3.
Figure 5.
I
F
I
RRM
Gate charge test circuit
Diode recovery time waveform
di/dt
t
a
di/dt
t
rr
t
b
Q
I
V
RRM
rr
F
AM01505v1
AM01507v1
t