STGW40N120KD STMicroelectronics, STGW40N120KD Datasheet - Page 4

• Manufacturer Part Number: STGW40N120KD
• Description: IGBT 1200V 80A 240W TO247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW40N120KD

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.85V @ 15V, 30A
• Current - Collector (ic) (max): 80A
• Power - Max: 240W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-10000-5

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Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
V
V
J
(BR)CES
CE(sat)
I
I
C
GE(th)
C
C
Q
= 25 °C unless otherwise specified)
GES
Q
CES
Q
oes
ies
res
ge
gc
g
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
GE
GE
Static
Dynamic
= 0)
= 0)
Parameter
Parameter
CE
= 0)
Doc ID 15360 Rev 3
I
V
V
T
V
V
V
V
V
V
I
C
C
J
GE
GE
CE
CE
CE
GE
CE
CE
= 30 A,V
= 1 mA
=125 °C
= V
= 15 V, I
= 15 V, I
=1200 V
=1200 V, T
=± 20 V
= 25 V, f = 1 MHz, V
= 960 V,
Test conditions
Test conditions
GE
, I
GE
C
C
C
= 1mA
= 30 A
= 30 A,
=15 V
J
=125 °C
GE
=0
1200
Min.
Min.
4.5
-
-
Typ.
2577
Typ. Max.
2.8
2.7
39.5
22.2
196
126
67
± 100
Max.
3.85
500
6.5
10
-
-
Unit
Unit
mA
nC
nC
nC
pF
pF
pF
µA
nA
V
V
V
V