STGW30N120KD STMicroelectronics, STGW30N120KD Datasheet - Page 3

• Manufacturer Part Number: STGW30N120KD
• Description: IGBT 30A 1200V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW30N120KD

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.85V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-7015-5

STGW30N120KD
1
Electrical ratings
Table 2.
1.
2. Vclamp = 80% of V
3. Pulse width limited by max. junction temperature allowed
Table 3.
Symbol
Symbol
R
R
I
R
I
V
P
t
I
I
CL
CP
I
V
Calculated according to the iterative formula:
C
C
SCW
FSM
thj-case
thj-case
thj-amb
CES
TOT
I
T
GE
F
(1)
(1)
j
(2)
(3)
Collector-emitter voltage (V
Collector current (continuous) at 25 °C
Collector current (continuous) at 100 °C
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Short circuit withstand time, V
T
Total dissipation at T
Diode RMS forward current at T
Surge non repetitive forward current t
sinusoidal
Operating junction temperature
Absolute maximum ratings
j
Thermal resistance
Thermal resistance junction-case IGBT max.
Thermal resistance junction-case diode max.
Thermal resistance junction-ambient IGBT max.
= 125 °C, R
CES
, T
I
C
j
G
=125 °C, R
(
T
= 10 Ω, V
C
)
Parameter
=
C
Parameter
= 25 °C
-------------------------------------------------------------------------------------------------------
R
G
thj c
=10 Ω, V
GE
–
GE
= 12 V
×
CE
= 0)
V
C
= 0.5 V
CE sat
GE
= 25 °C
(
=15 V
T
p
j max
(
= 10 ms
) max
(
(BR)CES
)
–
)
(
T
T
C
j max
(
)
,
I
C
(
T
C
)
)
– 55 to 125
Value
Value
1200
0.45
100
100
±25
220
100
1.6
60
30
10
30
50
Electrical ratings
°C/W
°C/W
°C/W
Unit
Unit
µs
°C
W
V
A
A
A
A
V
A
A
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