STGP30NC60W STMicroelectronics, STGP30NC60W Datasheet - Page 7

• Manufacturer Part Number: STGP30NC60W
• Description: IGBT N-CHAN 600V 30A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP30NC60W

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 30A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-6734-5; STGP30NC60W

IGBT ordering information
IGBT module ordering information
The option digit is present only for IGBT power modules, not IGBT intelligent power modules (IPM)
Package type
D...T4 = DPAK (tape & reel)
B...T4 = D ² PAK (tape & reel)
D...-1 = IPAK
B...-1 = I ² PAK
I C current at T C = 100 °C
Application
3P = 3-phase bridge (sixpack)
IP = IPM
Package
2 M SEMITOP2
3 M SEMITOP3
WA = TO-247 long leads
WF = TO-3PF
S = SDIP-25L Molded
L = SDIP-38L Molded
W = TO-247
P = TO-220
Y = Max247
E = ISOTOP
S = SO-8
F = TO-220FP
J = TO-264
IGBT
IGBT
®
ST
ST G yy zz
G
W
35 HF 60 WD
iii
w
Technology
NC = N-channel planar PT with life time control
NB = N-channel planar PT
HF = N-channel advanced planar PT
vvv
Technology
N = Fast
K = Short circuit rugged
I C current at T C = 80 °C (power modules)
I C current at T C = 25 °C (IPM)
Special features
L = Logic level
Z = Internally clamped for automotive
S = Up to 1 kHz low drop
H = Up to 50 kHz
K = Up to 50 kHz short circuit rugged
V = Up to 50 kHz high power
W = Up to 100 kHz
D = Anti-parallel diode
V CES voltage divided by 10
V CES voltage divided by 10
Option
B = 1 -Φ input diode bridge
D = 3 -Φ input diode bridge
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